A study of defects in LEC GaAs after copper diffusion

机译：铜扩散后LEC GaAs的缺陷研究

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the defects present after the diffusion of copper at 770 deg C in semiinsulating LEC GaAs have been studied by TEM,photoetching and atomic force microscopy.Clusters of microloops in the matrix and around the dislocations have been observed.The enhanced etching velocity in the surroundings of the dislocations suggests that they have gettered Cu.The relationship between such defects and gettering and the generation of non-equilbrium point defects associated with Cu diffusion and incorporation in the GaAs lattice is discussed.

机译：通过透射电镜，光蚀刻和原子力显微镜研究了770℃下铜在半绝缘LEC GaAs中扩散后出现的缺陷。观察到了基体中和位错周围的微环簇。讨论了这些缺陷与吸杂之间的关系，以及与GaAs晶格中Cu扩散和结合相关的非邻位点缺陷的产生。

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《Microscopy of semiconducting materials 1999》|1999年|p.77-80|共4页
会议地点 Oxford(GB);Oxford(GB)
作者
C Frigeri; J L Weyher; S Muller; P Hiesinger;
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正文语种 eng
中图分类机械、仪表工业;
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1. Analysis of peculiar structural defects created in GaAs by diffusion of copper [J] . C. Frigeri, J.L. Weyher, S. Mueller, Journal of Crystal Growth . 2000,第1a3期

机译：分析由于铜扩散而在GaAs中产生的特殊结构缺陷
2. Contactless electro-reflectance study of interdiffusion in heat-treated GaAs1-xSbx/GaAs single quantum wells [J] . Ghosh S., Homewood KP., Gillin WP., Journal of Physics. Condensed Matter . 1998,第43期

机译：GaAs1-xSbx / GaAs单量子阱中互扩散的非接触电反射研究
3. Diffusional Properties of the Stage‐III Defect in Copper. II. A Model for Defect‐Dislocation Interactions [J] . Journal of Applied Physics . 1967,第8期

机译：III期缺陷在铜中的扩散特性。二。缺陷-位错相互作用的模型
4. A study of defects in LEC GaAs after copper diffusion [C] . C Frigeri, J L Weyher, S Muller, Conference on microscopy of semiconducting materials . 1999

机译：铜扩散后LEC GaAs缺陷研究
5. Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions. [D] . Watson, John D. 2015

机译：通过分子束外延生长低无序GaAs / AlGaAs异质结构，以研究二维相关电子相。
6. Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE [O] . Riaz H Mari, Muhammad Shafi, Mohsin Aziz, 2011

机译：MBE在（100）和（311）A GaAs衬底上生长的Be掺杂AlGaAs中深层缺陷的电学表征
7. Enhancement of quantum well intermixing on InP/InGaAs/InGaAsP heterostructures using titanium oxide surface stressors to induce forced point defect diffusion [O] . François A., Aimez V., Beauvais J., 2006

机译：利用氧化钛表面应力引发强迫点缺陷扩散，增强Inp / InGaas / InGaasp异质结上的量子阱混合
8. Suppression of Copper-Related Level in LEC pGaAs by Platinum Diffusion [R] . Fang, Z. Q., Schlesinger, T. E., Milnes, A. G. 1987

机译：用铂扩散抑制LEC pGaas中的铜相关水平

A study of defects in LEC GaAs after copper diffusion

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