The main material for photovoltaic applications is multicrystalline silicon (mc-Si).The efficiency of corresponding solar cells depends on lattice defects such as grain boundaries,dislocations,small precipitates and point defects.Oxygen and carbon are the main impurities in mc-Si.The concentrations of oxygen are comparable to Cz-silicon,whereas the carbon concentrations are usually higher in mc-Si.Their agglomeration depends on the different growth techniques and subsequent technological processing steps.The present investigations include the precipitation behaviour of mc-Si grown by directional solidification in an ingot.The material is characterized by FTIR spectroscopy and TEM. The precipiation behaviour of mc-Si compared to Cz-material.
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