EBIC studies of heterojunction bipolar transistors

机译：异质结双极晶体管的EBIC研究

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Measurements on GaAs homo- and heterojunction bipolar transistors followed the approach of Gonzales (1974) who considered the interaction of the two junctions in analysing such devices.The electron beam induced voltage produced across a charge collecting barrier without an electrical contact could be detected by a neighbouring junction.This can be useful for examining regions of integrated circuits to which no direct contact is made.Observations on the two forms of GaAs transistors are presented and discussed.

机译：GaAs同质和异质结双极晶体管的测量遵循Gonzales（1974）的方法，他在分析此类器件时考虑了两个结的相互作用。这对于检查没有直接接触的集成电路区域很有用。本文介绍并讨论了两种形式的GaAs晶体管的观察。

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《Microscopy of semiconducting materials 1999》|1999年|p.687-692|共6页
会议地点 Oxford(GB);Oxford(GB)
作者
F Amin; D B Holt; G A Hungerford; E Napchan; A Rezazadeh;
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正文语种 eng
中图分类机械、仪表工业;
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1. Low-Capacitance Low-Voltage Transient Voltage Suppressor Using Diode-Activated SiGe Heterojunction Bipolar Transistor in SiGe Heterojunction Bipolar Transistor Bipolar Complementary Metal-Oxide-Semiconductor Process [J] . Sheng-Huei Dai, Jeng-Jie Peng, Chia-Cheng Chen, Japanese journal of applied physics . 2009,第4issue2期

机译：SiGe异质结双极晶体管双极互补金属氧化物半导体工艺中使用二极管激活的SiGe异质结双极晶体管的低电容低电压瞬态电压抑制器
2. Comparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistors [J] . Yue-Fei Yang, Chung-Chi Hsu IEEE Transactions on Electron Devices . 1995,第7期

机译：GaInP / GaAs异质结发射极双极晶体管与异质结双极晶体管的比较
3. COMPARATIVE STUDY ON FREQUENCY RESPONSE OF HETEROJUNCTION BIPOLAR TRANSISTOR [J] . ARNIMA DAS, MAITREYI RAY KANJILAL Semiconductors and Semimetals . 2016,第4期

机译：异质结双极晶体管的频率响应比较研究
4. EBIC studies of heterojunction bipolar transistors [C] . F Amin, D B Holt, G A Hungerford, Conference on microscopy of semiconducting materials . 1999

机译：异质结双极晶体管的EBIC研究
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

机译：用于高效光伏转换的三端异质结双极晶体管太阳能电池
7. Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) [O] . Geonyeop Lee, Stephen J. Pearton, Fan Ren, 2019

机译：异结双极晶体管：具有高电流扩增的2D基于材料的垂直双相杂交双极晶体管（ADV。电子。Matter。3/2019）
8. Exploratory Development of SiC Bipolar Transistors and GaN heterojunction Bipolar Transistors for High-Power Switching Applications. [R] . Cooper, J. A. 2003

机译：用于大功率开关应用的siC双极晶体管和GaN异质结双极晶体管的探索性开发。

EBIC studies of heterojunction bipolar transistors

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