首页> 外文会议>Microwave Conference Proceedings (APMC), 2011 Asia-Pacific >Thermal impedance modeling of GaAs multi-finger HBTs from low frequency s-parameter measurements
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Thermal impedance modeling of GaAs multi-finger HBTs from low frequency s-parameter measurements

机译:GaAs多指HBT的热阻抗建模(基于低频s参数测量)

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摘要

Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be modeled by the addition of a thermal impedance to a compact nonlinear transistor model. We developed thermal impedance parameters that can be scaled for multi-finger devices, using the measured low frequency s-parameters of 1, 2, 4, and 6-finger transistors. The model gave very good fit to the measurements at all bias points.
机译:基于GaAs的异质结双极晶体管中的自加热会影响微波性能,因此在电路设计中必须加以考虑。可以通过在紧凑的非线性晶体管模型中增加热阻来建模。我们使用测得的1、2、4和6指晶体管的低频s参数,开发了可针对多指器件按比例缩放的热阻参数。该模型非常适合所有偏置点的测量。

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