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首页> 外文会议>Microwave Conference Proceedings (APMC), 2011 Asia-Pacific >Capacitance and RF-conductance/transconductance look-up table based pHEMT model
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Capacitance and RF-conductance/transconductance look-up table based pHEMT model

机译：基于电容和射频电导/跨导查询表的pHEMT模型

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摘要

A capacitance and RF-conductance/RF-transconductance look-up table based large-signal pHEMT model is presented based on an ensemble of bias-dependent small-signal equivalent circuits. The model is capable of accurate simulation of small-signal S-parameters as well as large-signal performance over the data-acquisition bias range. In addition to the dc current sources, the model contains two capacitive current sources and two dynamic RF current sources, which fit RF-DS conductance and transconductance respectively. By introducing the dynamic RF current sources, the problem of path-dependence which occurs in modeling large-size devices and devices with dispersion is resolved. The model is symmetric and swappable between drain and source. The model has also accurate leakage model and can be used for either amplifier or switch applications. The validity of the model is demonstrated by comparing the simulation of DC curves, leakages, and small-signal S-parameters over a wide bias range, by comparison of the measured data. Large-signal power/harmonics simulation shows good comparison to the measured data.
机译：基于与偏置相关的小信号等效电路的集合，提出了基于电容和RF-电导/ RF-跨导查找表的大信号pHEMT模型。该模型能够在数据采集偏置范围内精确仿真小信号S参数以及大信号性能。除直流电流源外，该模型还包含两个电容性电流源和两个动态RF电流源，分别适合RF-DS电导和跨导。通过引入动态RF电流源，解决了在建模大型器件和具有色散的器件时出现的路径依赖性问题。该模型是对称的，可在漏极和源极之间互换。该模型还具有准确的泄漏模型，可用于放大器或开关应用。通过比较实测数据，在宽偏置范围内比较DC曲线，泄漏和小信号S参数的仿真，证明了该模型的有效性。大信号功率/谐波仿真显示了与测量数据的良好对比。

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