Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering

著录项

• 来源
  《Nanoengineering: Fabrication, properties, optics and devices V》|2008年|70390U.1-70390U.10|共10页
• 会议地点 San Diego CA(US)
• 作者

  I. R. McKerracher; L. Fu; H. H. Tan; C. Jagadish;

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• 作者单位

  Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia;

  Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia;

  Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia;

  Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 特种结构材料;
• 关键词

  quantum well; intermixing; impurity-free vacancy disordering; sputter deposition;

  机译：量子阱混合无杂质空位紊乱；溅射沉积;