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Fabrication and characterization of nanostructure thin film ZnO Schottky contacts based UV photodetectors

机译:纳米结构薄膜ZnO肖特基接触式紫外光电探测器的制备与表征

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We report on characterization of Pd/ZnO nanostructure thin film Schottky contacts based UV photodetector. The ZnO film was grown on p-type Si <100> substrate by using vacuum thermal evaporation method. With applied voltage in the range from -2V to 2V we estimated the photocurrent, contrast-ratio, responsivity and quantum-efficiency of the photodetectors for an incident optical power of 0.1 mW at 365nm ultraviolet wavelength. The Ⅰ-Ⅴ characteristics were studied and the parameters such as ideality-factor, leakage-current, and barrier-height of the Schottky contacts were extracted from the measured data. The surface morphological and the structural properties of the thin film were studied by atomic force microscope (AFM) and scanning electron microscopy (SEM). The bandgap of ZnO is evaluated from the absorbance spectra of ZnO thin film obtained by using double beam spectrophotometer. For the investigation of the surface chemical bonding, X-ray photoelectron spectroscopy (XPS) measurements were also performed. The device exhibited good stability, high efficiency and high sensitivity under the reverse bias condition. For forward bias, the UV detection sensitivity decreased proportionally to the bias voltage.
机译:我们报告基于紫外光电探测器的Pd / ZnO纳米结构薄膜肖特基接触的表征。通过使用真空热蒸发法,在p型Si <100>衬底上生长ZnO膜。在-2V至2V的施加电压范围内,我们估算了在365nm紫外线波长下入射光功率为0.1mW时光电探测器的光电流,对比度,响应度和量子效率。研究了Ⅰ-Ⅴ特性,并从实测数据中提取了肖特基接触的理想因子,漏电流和势垒高度等参数。通过原子力显微镜(AFM)和扫描电子显微镜(SEM)研究了薄膜的表面形貌和结构性能。由使用双光束分光光度计获得的ZnO薄膜的吸收光谱评价ZnO的带隙。为了研究表面化学键合,还进行了X射线光电子能谱(XPS)测量。该器件在反向偏置条件下表现出良好的稳定性,高效率和高灵敏度。对于正向偏置,UV检测灵敏度与偏置电压成比例地降低。

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