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首页> 外文会议>Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics; Proceedings of SPIE-The International Society for Optical Engineering; vol.6370 >Synthesis, Characterization and Physical Properties of Transition Metal Silicide Nanowires
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Synthesis, Characterization and Physical Properties of Transition Metal Silicide Nanowires

机译：过渡金属硅化物纳米线的合成，表征和物理性能

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摘要

We develop rational chemical strategies to synthesize novel one-dimensional nanowire materials of transition metal silicides, investigate their physical properties, and use them as nanoscale building blocks for the bottom-up assembly of integrated photonic, electronic, and spintronic nanosystems. Transition metal silicides are extremely important to microelectronics because of the ohmic contact and interconnect many silicides (NiSi, CoSi_2, and TiSi_2) provide. Furthermore, many silicides are direct bandgap semiconductors (CrSi_2, β-FeSi_2) and are promising for silicon—based photonics. The recent discovery of Fe_xCo_(1-x)Si alloys as ferromagnetic semiconductors make them promising for spintronic applications as well. Herein, we describe the chemical synthesis of free standing single-crystal nanowires (NWs) of FeSi, the only transition metal Kondo insulator and isostructural CoSi, an important metallic silicide for CMOS electronics. Straight and smooth FeSi and CoSi nanowires are produced on silicon substrates covered with a thin layer of silicon oxide through the decomposition of the single source organometallic precursors trans-Fe(SiCl_3)_2(CO)_4 and Co(SiCl_3)(CO)_4, respectively, in a simple chemical vapor deposition (CVD) process. Unlike typical vapor-liquid-solid (VLS) NW growth, silicide NWs form without the addition of metal catalysts, have no catalyst tips, and depend strongly on the surface employed. The physical properties of these new FeSi and CoSi nanowires, including electrical transport and X-ray spectroscopy, are reported. This general approach to silicide nanowire growth is likely to yield other functional silicide nanosystems with significant applications in nanoelectronics and nanophotonics, and for Fe_xCo_(1-x)Si, silicon based spintronics.
机译：我们开发合理的化学策略来合成过渡金属硅化物的新型一维纳米线材料，研究其物理性质，并将其用作集成光子，电子和自旋电子纳米系统的自底向上组装的纳米级构建基块。过渡金属硅化物对于微电子学极为重要，因为它提供了许多硅化物（NiSi，CoSi_2和TiSi_2）提供的欧姆接触和互连。此外，许多硅化物是直接带隙半导体（CrSi_2，β-FeSi_2），并有望用于硅基光子学。 Fe_xCo_（1-x）Si合金作为铁磁半导体的最新发现也使它们也有望用于自旋电子学。在这里，我们描述了FeSi（唯一的过渡金属近藤绝缘子）和同构CoSi（对CMOS电子产品重要的金属硅化物）的单晶纳米线（NWs）的化学合成。通过单源有机金属前驱体反式Fe（SiCl_3）_2（CO）_4和Co（SiCl_3）（CO）_4的分解，在覆盖有氧化硅薄层的硅基板上生产出直而光滑的FeSi和CoSi纳米线，分别以简单的化学气相沉积（CVD）工艺进行。与典型的汽-液-固（NLS）生长不同，硅化物NW形成时不添加金属催化剂，没有催化剂尖端，并且强烈依赖所使用的表面。据报道，这些新型FeSi和CoSi纳米线的物理特性包括电传输和X射线光谱学。这种用于硅化物纳米线生长的一般方法可能会产生在纳米电子学和纳米光子学中具有重要应用的其他功能性硅化物纳米系统，对于Fe_xCo_（1-x）Si，则是基于硅的自旋电子学。

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