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首页> 外文会议>Nanomaterials by sever plastic deformation IV >Control of crystallographic orientation and grain refinement in Bi_2Te_3-based thermoelectric semiconductors by applying high pressure torsion
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Control of crystallographic orientation and grain refinement in Bi_2Te_3-based thermoelectric semiconductors by applying high pressure torsion

机译：通过施加高压扭力控制Bi_2Te_3基热电半导体的晶体取向和晶粒细化

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摘要

Prepared were p-type Bi_2Te_3-based thermoelectric semiconductors, having a grain-refined microstructure and a preferred orientation of anisotropic crystallographic structure. Disks with a nominal composition Bi_(0.5)Sb_(1.5)Te_(3.0) were cut from an ingot grown by the vertical Bridgman method (VBM) and deformed at 473 K under a pressure of 6.0 GPa by high pressure torsion (HPT). The crystal orientation was characterized with X-ray diffraction. The microstructures were characterized by using optical microscopy and scanning electron microscopy. It was found that the HPT disks had a fine and preferentially oriented grain compared to that of the VBM disks. Further, the power factor of the HPT disks was about twice as large as that of the VBM disks. These results indicate that HPT is effective for improving the thermoelectric properties of Bi_2Te_3-based thermoelectric semiconductors.
机译：制备具有晶粒细化的微结构和各向异性晶体学结构的优选取向的基于p型Bi_2Te_3的热电半导体。从通过垂直Bridgman方法（VBM）生长的铸锭上切下标称成分Bi_（0.5）Sb_（1.5）Te_（3.0）的圆盘，并在473 K下通过高压扭力（HPT）在6.0 GPa的压力下变形。晶体取向通过X射线衍射表征。通过使用光学显微镜和扫描电子显微镜来表征微观结构。已经发现，与VBM盘相比，HPT盘具有精细且优先定向的晶粒。此外，HPT磁盘的功率因数约为VBM磁盘的功率因数的两倍。这些结果表明，HPT对于改善Bi_2Te_3基热电半导体的热电性能是有效的。

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  • 来源
  • 会议地点 Goslar(DE);Goslar(DE)
  • 作者

    Maki Ashida; Takashi Hamachiyo; Kazuhiro Hasezaki; Hirotaka Matsunoshita; Masaaki Kai; Zenji Horita;

  • 作者单位

    Department of Materials Science, Shimane University, 1060 Nishikawatsu, Matsue, Shimane 690-8504, Japan;

    Department of Materials Science, Shimane University, 1060 Nishikawatsu, Matsue, Shimane 690-8504, Japan;

    Department of Materials Science, Shimane University, 1060 Nishikawatsu, Matsue, Shimane 690-8504, Japan;

    Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka, Fukuoka 819-0395, Japan;

    Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka, Fukuoka 819-0395, Japan;

    Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka, Fukuoka 819-0395, Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料一般性问题;
  • 关键词

    thermoelectric semiconductor; bismuth telluride; high pressure torsion;

    机译：热电半导体碲化铋高压扭力;

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