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首页> 外文期刊>Materials transactions >Effects of Low Rotational Speed on Crystal Orientation of Bi_2Te_3-Based Thermoelectric Semiconductors Deformed by High-Pressure Torsion
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Effects of Low Rotational Speed on Crystal Orientation of Bi_2Te_3-Based Thermoelectric Semiconductors Deformed by High-Pressure Torsion

机译：低转速对高压扭转形变的Bi_2Te_3基热电半导体晶体取向的影响

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摘要

Bi_2Te_3-based thermoelectric semiconductors were deformed by high-pressure torsion (HPT) using a low rotational speed of 0.1 rpm, which is less than the speed of 1 rpm used in our previous studies. The effects of different rotational speeds were investigated by metallographic and thermoelectric studies. Sample disks of p-type Bi_(0.5)Sb_(1.5)Te_(3.0) were cut from sintered compacts made by mechanical alloying (MA) followed by hot-pressing. The disks were deformed by HPT with 1,3, and 5 turns at 473 K under 6.0 GPa of pressure at a rotational speed of 0.1 rpm. The preferred orientation was investigated using X-ray diffraction. The orientation factors of the disks changed from 0.054 for pre-rotation up to 0.653 for post-rotation samples. The maximum power factor of the disk using 5 turns and a speed of 0.1 rpm was 6.6 x 10~(-3) W m~(-1) K~(-2) at 363 K, which was larger than the reported power factors of 4.3 x 10~(-3)W m~(-1) K~(-2) for a disk using 5 turns and a speed of 1 rpm, and 4.6 x 10~(-3) Wm~(-1) K~(-2) for melt-grown materials. Slow deformation by HPT was found to enhance the electrical conductivities and Seebeck coefficients of Bi_2Te_3-based thermoelectric semiconductors by producing a preferred orientation and grain refinement.
机译：基于Bi_2Te_3的热电半导体通过高压扭转（HPT）使用0.1 rpm的低旋转速度变形，该旋转速度小于我们先前研究中使用的1 rpm的速度。通过金相和热电研究研究了不同转速的影响。从通过机械合金化（MA）然后热压制成的烧结压块切割出p型Bi_（0.5）Sb_（1.5）Te_（3.0）的样品盘。圆盘通过HPT在1,3,3变形，在473 K，6.0 GPa压力，0.1 rpm的转速下旋转5圈。使用X射线衍射研究了优选的取向。磁盘的方向因子从旋转前的0.054变为旋转后的样品的0.653。在363 K时，使用5圈和0.1 rpm速度的磁盘的最大功率因数为6.6 x 10〜（-3）W m〜（-1）K〜（-2），大于报告的功率因数对于使用5圈和1 rpm的速度的磁盘，其4.3 x 10〜（-3）W m〜（-1）K〜（-2）为4.6 x 10〜（-3）Wm〜（-1） K〜（-2）用于熔体生长材料。发现通过HPT的缓慢变形通过产生优选的取向和晶粒细化来提高Bi_2Te_3基热电半导体的电导率和塞贝克系数。

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