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Detailed Theoretical Investigation and Comparison of the Thermal Conductivities of n- and p-type Bi_2Te_3 Based Alloys

机译:n型和p型Bi_2Te_3基合金导热系数的详细理论研究和比较

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In this work we present a detailed theoretical investigation of the thermal conductivities of n-type 0.1 wt.% CuBr doped 85% Bi_2Te_3 - 15% Bi_2Se_3 and p-type 3 wt% Te doped 20% Bi_2Te_3 - %80 Sb_2Te_3 single crystals. The thermal conductivity contributions arising from carriers, electron-hole pairs and phonons are computed rigorously in the temperature range 300 K ≤ T ≤ 500 K. In agreement with available experimental measurements we theoretically find that the lowest total thermal conductivity is 3.15 W K~(-1) m~(-1) at 380 K for the n-type alloy and 1.145 W K~(-1) m~(-1) at 400 K for the p-type alloy. Stronger mass-defect scattering is found to be responsible for the lower thermal conductivity of the p-type alloy throughout the temperature range of the study.
机译:在这项工作中,我们提供了对n型0.1 wt。%CuBr掺杂的85%Bi_2Te_3-15%Bi_2Se_3和p型3 wt%Te掺杂的20%Bi_2Te_3-%80 Sb_2Te_3单晶的导热率的详细理论研究。在300 K≤T≤500 K的温度范围内,严格计算了由载流子,电子-空穴对和声子引起的热导率贡献。与可用的实验测量结果相符,我们从理论上发现,最低的总热导率为3.15 WK〜(- 1)n型合金在380 K下的m〜(-1)和p型合金在400 K下的1.145 WK〜(-1)m〜(-1)。发现在整个研究温度范围内,较强的质量缺陷散射是p型合金导热系数较低的原因。

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