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Luminescent Properties of CdSe Quantum Dots Subjected to MBE GaN Growth Temperatures

机译：MBE GaN生长温度下CdSe量子点的发光特性

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摘要

CdSe semiconductor quantum dots have received an enormous amount of attention due to their intense luminescent properties in the middle of the visible spectrum, By attempting to emulate the quantum confinement properties of the successful GaN/InGaN blue light emitting diode (LED), an efficient inorganic LED in the deep green spectral region could theoretically be achieved by incorporating CdSe quantum dots within the active region. The semiconductor growth process would expose the quantum dots to temperatures at a minimum of 600℃. This paper reports on a series of anneal experiments to determine the luminescent properties of colloidal CdSe quantum dots on GaN that were annealed at 350℃ and 620℃. The experiment took place in a MBE chamber under high vacuum loaded with quantum dot samples to simulate the environment to simulate the environment of epitaxial growth. We report on the quantum dots subsequent luminescence and a resulting blue shift in peak emission.
机译：由于CdSe半导体量子点在可见光谱的中间具有强烈的发光特性，因此受到了广泛的关注。通过尝试模拟成功的GaN / InGaN蓝光发光二极管（LED）的量子限制特性，一种有效的无机材料理论上，深绿色光谱区域中的LED可通过将CdSe量子点合并到有源区域中来实现。半导体生长过程将使量子点暴露在至少600℃的温度下。本文报道了一系列退火实验，以确定在350℃和620℃退火的GaN胶体CdSe量子点的发光特性。实验是在高真空下的MBE室中进行的，其中装有量子点样品，以模拟环境，以模拟外延生长的环境。我们报告量子点随后的发光以及峰发射中的蓝移。

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  • 来源
    《Nanotechnology-general》|2008年|165-170|共6页
  • 会议地点 Honolulu HI(US);Honolulu HI(US);Honolulu HI(US)
  • 作者

    M. D. Hodge; J. Pagan; C. C. Burkhart; K. Patel; E. B. Stokes;

  • 作者单位

    Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina 28223, USA;

    Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina 28223, USA;

    Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina 28223, USA;

    Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina 28223, USA;

    Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina 28223, USA;

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  • 正文语种 eng
  • 中图分类 特种结构材料;
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