A flexible thin-film transistor with high field-effect mobility by using carbon nanotubes

机译：使用碳纳米管的具有高场效应迁移率的柔性薄膜晶体管

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This paper describes a flexible thin-film transistor (TFT) fabricated on a standard transparency fdm. The carrier transport layer of this TFT is a high-density ultrapure carbon nanotube (CNT) film formed by using an electronic-grade CNT solution from Brewer Science, Inc. This CINT-TFT demonstrates a high field-effect mobility of ~ 48,000 cm2/Vs and a large current-carrying capacity of > 35 mA. Such a device would become a critical building block of next-generation low-cost large-area high-speed flexible electronics.

机译：本文介绍了一种在标准透明度fdm上制造的柔性薄膜晶体管（TFT）。该TFT的载流子传输层是通过使用Brewer Science，Inc.的电子级CNT溶液形成的高密度超纯碳纳米管（CNT）膜。该CINT-TFT表现出〜48,000 cm <的高场效应迁移率。 sup> 2 / Vs和大于35 mA的大载流能力。这种设备将成为下一代低成本大面积高速柔性电子产品的重要组成部分。

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《Nanotechnology Materials and Devices Conference, 2006 IEEE》||P.296-297|共2页
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Xuliang Han; Janzen D.C.; Vaillancourt J.; Xuejun Lu;
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中图分类工业技术;
关键词
carbon nanotubes; thin film transistors; TFT fabrication; carbon nanotube; carrier transport layer; electronic-grade CNT solution; flexible thin-film transistor; high field-effect mobility; standard transparency film; carbon nanotube; field-effect mobility; flexibl;

机译：碳纳米管;薄膜晶体管; TFT制造;碳纳米管;载流子传输层;电子级CNT解决方案;柔性薄膜晶体管;高场效应迁移率;标准透明膜;碳纳米管;场效应迁移率;柔性;

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1. High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques [J] . Kentaro Higuchi, Shigeru Kishimoto, Yuta Nakajima, _Applied Physics Express . 2013,第8期

机译：通过转移和高速柔版印刷技术制造的高迁移率，柔性碳纳米管薄膜晶体管
2. Performance Comparison of Single- and Dual-Gate Carbon-Nanotube Thin-Film Field-Effect Transistors [J] . Narasimhamurthy K. C., Paily R. Electron Devices, IEEE Transactions on . 2011,第7期

机译：单门和双门碳纳米管薄膜场效应晶体管的性能比较
3. Fabrication and characterisation of high-performance and high-current back-gate thin-film field-effect transistors using sorted single-walled carbon nanotubes [J] . Narasimhamurthy K.C., Paily R. Circuits, Devices & Systems, IET . 2011,第5期

机译：使用分选的单壁碳纳米管的高性能和高电流背栅薄膜场效应晶体管的制备和表征
4. A flexible thin-film transistor with high field-effect mobility by using carbon nanotubes [C] . Xuliang Han, Janzen D.C., Vaillancourt J., IEEE Nanotechnology Materials and Devices Conference . 2006

机译：一种柔性薄膜晶体管，采用碳纳米管具有高场效应迁移率
5. Synthesis of single-walled carbon nanotubes and characterization of nanotube-based field-effect transistors. [D] . Kim, Woong. 2005

机译：单壁碳纳米管的合成和基于纳米管的场效应晶体管的表征。
6. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric [O] . Dongil Lee, Jinsu Yoon, Juhee Lee, -1

机译：由柔性碳纳米管薄膜晶体管和超薄聚合物栅极电介质组成的逻辑电路
7. Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor [O] . Natori Kenji, Kimura Yoji, Shimizu Tomo 2005

机译：分析为弹道纳米线场效应晶体管的碳纳米管场效应晶体管的特性
8. High-mobility Carbon-nanotube Thin-film Transistors on a Polymeric Substrate. [R] . E. S. Snow J. P. Novak M. G. Ancona P. M. Campbell 2005

机译：聚合物基板上的高迁移率碳纳米管薄膜晶体管。

A flexible thin-film transistor with high field-effect mobility by using carbon nanotubes

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