Multilevel dual-channel NAND flash memories with high-speed read and verifying program

机译：具有高速读取和验证程序的多级双通道NAND闪存

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The multilevel dual channel (MLDC) NAND flash memory cell structures with asymmetrically-doped channel regions are proposed. The channel structures with a MLDC flash cell consisted of the two different doping channel regions. The technical computer aided design simulation results showed that the designed MLDC NAND flash cell provided the high-speed multilevel reading and program verifying due to the sensing of the discrete current levels utilizing the unique asymmetric channel structure.

机译：提出了具有非对称掺杂沟道区的多级双沟道（MLDC）NAND闪存单元结构。带有MLDC闪存单元的沟道结构由两个不同的掺杂沟道区域组成。技术计算机辅助设计仿真结果表明，所设计的MLDC NAND闪存单元利用独特的非对称通道结构来感测离散电流电平，从而提供了高速多级读取和程序验证。

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《Nanotechnology Materials and Devices Conference, 2006 IEEE》||P.382-383|共2页
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Jae-Ho Kim; Joung-Woo Lee; Kyung-Sik Mun; Tae Whan Kim;
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中图分类工业技术;
关键词
Multi-Level Dual-Channel; asymmetrically-doped channel; current sensing; reduce reading and program verifying time;

机译：多级双通道;非对称掺杂通道;电流感应;减少读取和程序验证时间;

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1. Multilevel Dual-Channel NAND Flash Memories with High Read and Program Verifying Speeds Utilizing Asymmetrically-Doped Channel Regions [J] . Joung Woo LEE, Joo Hyung YOU, Sang Hyun JANG, IEICE Transactions on Electronics . 2010,第5期

机译：利用非对称掺杂的通道区域，具有高读取和程序验证速度的多级双通道NAND闪存
2. Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions [J] . J. W. Lee, J. H. You, S. H. Jang, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2009,第98期

机译：利用非对称掺杂的通道区域，具有高读取和编程验证速度的多级双通道NAND闪存
3. Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions [J] . J. W. Lee, J. H. You, S. H. Jang, 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2009,第97期

机译：利用非对称掺杂的通道区域，具有高读取和编程验证速度的多级双通道NAND闪存
4. Multilevel Dual-channel NAND Flash Memories with High-speed Read and Verifying Program [C] . Jae-Ho Kim, Joung-Woo Lee, Kyung-Sik Mun, IEEE Nanotechnology Materials and Devices Conference . 2006

机译：具有高速读取和验证程序的多级双通道NAND闪存
5. Hot-carrier effects in flash erasable programmable read-only memory devices. [D] . San, Kemal Tamer. 1994

机译：闪存可擦可编程只读存储设备中的热载流子效应。
6. CMOS-compatible ferroelectric NAND flash memory for high-density low-power and high-speed three-dimensional memory [O] . Min-Kyu Kim, Ik-Jyae Kim, Jang-Sik Lee 2021

机译：CMOS兼容的铁电NAND闪存用于高密度低功耗和高速三维内存
7. CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory [O] . Min-Kyu Kim, Ik-Jyae Kim, Jang-Sik Lee 2021

机译：CMOS兼容的铁电NAND闪存，用于高密度，低功耗和高速三维内存

Multilevel dual-channel NAND flash memories with high-speed read and verifying program

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