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首页> 外文会议>Nanowires and nanotubes - synthesis, properties, devices and energy applications of one-dimensional materials >Influence of Ammoniating Temperatures on Microstructures, Morphologies and Optical Properties of GaN/Nb Nanostructures by RF Magnetron Sputtering Technique
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Influence of Ammoniating Temperatures on Microstructures, Morphologies and Optical Properties of GaN/Nb Nanostructures by RF Magnetron Sputtering Technique

机译：氨化温度对RF磁控溅射技术对GaN / Nb纳米结构的微观结构，形貌和光学性能的影响

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摘要

GaN nanowires and nanorods have been successfully synthesized on Si (111) substrates by magnetron sputtering through ammoniating Ga_2O_3/Nb thin films and the effects of ammoniation temperatures on growth of GaN nanowires and nanorods were analyzed in detail. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra were carried out to characterize microstructures, morphologies, and optical properties of GaN samples. The results demonstrate that sample after ammoniation at 950 ℃ is single crystal GaN with hexagonal wurtzite structure and high crystalline quality, having the size of 30 - 80 nm in diameter. After ammoniation at 1000 ℃, GaN nanorods appear with smooth and clean surface and more than 100 nm in diameter. The optical properties of GaN nanowires grown at 950 ℃ and nanorods grown at 1000 ℃ are best with strong emission intensities.
机译：通过磁控溅射Ga_2O_3 / Nb薄膜，通过磁控溅射法成功地在Si（111）衬底上合成了GaN纳米线和纳米棒，并详细分析了氨化温度对GaN纳米线和纳米棒生长的影响。进行了X射线衍射，X射线光电子能谱，扫描电子显微镜，高分辨率透射电子显微镜和光致发光光谱，以表征GaN样品的微观结构，形态和光学性质。结果表明，在950℃氨化后的样品为具有六方纤锌矿结构和高结晶质量的单晶GaN，直径为30-80 nm。在1000℃氨化后，GaN纳米棒出现，表面光滑洁净，直径超过100 nm。在950℃下生长的GaN纳米线和在1000℃下生长的纳米棒的光学性能最好，且具有较强的发射强度。

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