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THIN FILM CRYSTALLISATION BEHAVIOURS FOR OXIDES OF RARE-EARTH METALS ON AMORPHOUS SILICA

机译:非晶硅上稀土金属氧化物的薄膜结晶行为

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Crystallisation behaviours of rare-earth metal oxides (REMO) were investigated. By electron beam evaporation of the rare-earth metals in O_2 at a pressure of (2 - 6)· 10~(-3) Pa their oxide films were obtained on SiO_2 films that served as substrates. Thin REMO films deposited on the amorphous silica surface without any special heating the substrate were amorphous. When the condensation temperature increased, crystallisation of REMO films began. For different REMO films the start of crystallisation was observed at a substrate temperature of 80 - 200℃. A characteristic of the initial crystallisation stages was the appearance of high-temperature REMO phases (monoclinic phase of Sc_2O_3, hexagonal phase of Gd_2O_3, Er_2O_3 etc.) alongside with the C-cubic form. For the C-cubic form a high degree of the coherent dispersion blocks texturing was typical. With a small increase in the condensation temperature, the high-temperature phases disappeared in the film, and crystallites reoriented. In increasing the condensation temperature, nanocrystallites rebuilt repeatedly in the film. This was accompanied with reorientation of film texture in the film growth direction. It seems that amorphous silica surface is to influence on the phase transitions at a growth boundary during the initial stages of the REMO film crystallisation.
机译:研究了稀土金属氧化物(REMO)的结晶行为。通过电子束在(2-6)·10〜(-3)Pa的压力下蒸发O_2中的稀土金属,在用作衬底的SiO_2膜上获得了氧化膜。沉积在无定形二氧化硅表面上的REMO薄膜在没有任何特殊加热的情况下是无定形的。当冷凝温度升高时,REMO膜开始结晶。对于不同的REMO膜,在80-200℃的底物温度下观察到结晶开始。初始结晶阶段的特征是高温REMO相(Sc_2O_3的单斜晶相,Gd_2O_3的六方相,Er_2O_3等)的出现以及C-立方晶型。对于C立方形式,典型的是高度连贯的色散块。随着冷凝温度的少量增加,高温相在膜中消失,并且微晶重新取向。随着冷凝温度的升高,纳米晶体会在薄膜中反复重建。这伴随着膜质地在膜生长方向上的重新定向。在REMO膜结晶的初始阶段,非晶态二氧化硅表面似乎会影响生长边界处的相变。

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