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首页> 外文会议>NATO Advanced Research Workshop on Optical Properties of Semiconductor Nanostructures Jaszowiec, Poland 12-16 June 1999 >Near-field spectroscopy of a gated electron gas
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Near-field spectroscopy of a gated electron gas

机译：门控电子气的近场光谱

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摘要

We study the spatial distribution of the photoluminescence of a gated two-dimensional electron gas with sub-wavelength resolution. This is done by scanning a tapered optical fibre tip with an apertureof 250 nm in the near field region of the sample surface, and collecting the photoluminescense. The spectral line of the negatively charged exciton, formed by binding of a photo-excited electron-hole pair to an electron, serves as an indicator for the local presence of charge. The local luminescence intensity of this line is directly proportional to the number of electrons under the tip. We observe large spatial fluctuations in this intensity in the gate voltage range, where the electron conductivity exhibits a sharp drop. The amplitude of these fluctuations increases and the Fourier spectrum extends to lower spatial frequencies as the gate voltage becomes more negative. We show that the fluctuations are due to the statistical distribution of localised electrons in the random potential of the remote ionised donors. We use these fluctuations to image the electron and donor distribution in the plane.
机译：我们研究了具有亚波长分辨率的门控二维电子气的光致发光的空间分布。这是通过在样品表面的近场区域中扫描孔径为250 nm的锥形光纤尖端并收集光致荧光来完成的。通过将光激发的电子-空穴对与电子结合而形成的带负电的激子的谱线，可作为局部存在电荷的指示剂。这条线的局部发光强度与尖端下方的电子数量成正比。我们在栅极电压范围内观察到这种强度的较大空间波动，其中电子电导率呈现急剧下降。随着栅极电压变得越来越负，这些波动的幅度增加，傅立叶频谱扩展到较低的空间频率。我们表明，波动是由于远程电离施主的随机势中局部电子的统计分布所致。我们使用这些波动来成像平面中的电子和施主分布。

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