NOISE IN THE SINGLE ELECTRON TRANSISTOR AND ITS BACK ACTION DURING MEASUREMENT

机译：单电子晶体管中的噪声及其在测量中的反作用

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Single electron transistors (SETs) are very sensitive electrometers and they can be used in a range of applications. In this paper we give an introduction to the SET and present a full quantum mechanical calculation of how noise is generated in the SET over the full frequency range, including a new formula for the quantum current noise. The calculation agrees well with the shot noise result in the low frequency limit, and with the Nyquist noise in the high frequency limit. We discuss how the SET and in particular the radio-frequency SET can be used to read out charge based qubits such as the single Cooper pair box. We also discuss the backaction which the SET will have on the qubit. The back action is determined by the spectral power of voltage fluctuations on the SET island. We will mainly treat the normal state SET but many of the results are also valid for superconducting SETs.

机译：单电子晶体管（SET）是非常灵敏的静电计，可用于多种应用中。在本文中，我们对SET进行了介绍，并给出了如何在SET的整个频率范围内产生噪声的完整量子力学计算，包括一个用于量子电流噪声的新公式。该计算与低频极限中的散粒噪声结果以及高频极限中的奈奎斯特噪声非常吻合。我们讨论如何使用SET，尤其是射频SET来读取基于电荷的qubit，例如单个Cooper对盒。我们还将讨论SET对量子位的反作用。反向动作由SET岛上的电压波动的频谱功率决定。我们将主要处理正常状态SET，但是许多结果对于超导SET也有效。

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来源
《NATO Advanced Research Workshop on Quantum Noise in Mesoscopic Physics Jun 2-4, 2002 Delft, The Netherlands》|2002年|p.337-355|共19页
会议地点 Delft(NL)
作者
G. JOHANSSON; P. DELSING; K. BLADH; D. GUNNARSSON; T. DUTY; A. KAECK; G. WENDIN; A. AASSIME;
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Institut fuer Theoretische Festkoerperphysik Universitaet Karlsruhe, D-76128 Karlsruhe, Germany;

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原文格式 PDF
正文语种 eng
中图分类物理学;
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专利

1. Noise measurements on single electron transistors using bias switching read-out [J] . P. J. Hakonen, M. Kiviranta, J. S. Penttila, The European physical journal. Applied physics . 2000,第3期

机译：使用偏置开关读数在单电子晶体管上进行噪声测量
2. Discussion on ????????Measurements of junction-transistor noise in the frequency range 7-50 kc/s????????, ????????A germanium diffused-junction photo-electric cell????????, ????????Transistor power amplifiers????????, ????????Transistor d.c. convertors???????? and ????????Noise in silicon microwave diodes???????? before a joint meeting of the Radio and Measurements Sections, 11th May, 1955 [J] . Proceedings of the IEE - Part B: Radio and Electronic Engineering . 1955,第6期

机译：关于在7-50 kc / s频率范围内测量结型晶体管噪声的讨论?????????，锗扩散结光电二极管，电池?????????，?????????晶体管功率放大器?????????，????????晶体管dc转换器????????硅微波二极管中的噪声在1955年5月11日的无线电和测量部门的联席会议之前
3. Measurement of the shot noise in a single-electron transistor [J] . S. Kafanov, P. Delsing Physical review . 2009,第15期

机译：单电子晶体管中散粒噪声的测量
4. NOISE IN THE SINGLE ELECTRON TRANSISTOR AND ITS BACK ACTION DURING MEASUREMENT [C] . G. JOHANSSON, P. DELSING, K. BLADH, NATO advanced research workshop on quantum noise in mesoscopic physics . 2003

机译：单电子晶体管中的噪声及其在测量期间的背部动作
5. SQUID array measurements of mesoscopic current noise and superconducting single-electron transistors. [D] . Steinbach, Andrew Harvey. 1998

机译：SQUID阵列测量介观电流噪声和超导单电子晶体管。
6. Measurement of finite-frequency current statistics in a single-electron transistor [O] . Niels Ubbelohde, Christian Fricke, Christian Flindt, -1

机译：单电子晶体管中有限频率电流统计的测量
7. Noise in the Single Electron Transistor and its back action during measurement [O] . Johansson, G., Delsing, P., Bladh, K., 2002

机译：单电子晶体管中的噪声及其在电路中的反作用测量
8. Measurements of the Low Frequency Noise Properties of a 30 GHz High-Electron-Mobility-Transistor Amplifier [R] . Jarosik, Norman, Page, Lyman, Wilkinson, David, 1993

机译：30 GHz高电子迁移率晶体管放大器的低频噪声特性测量

NOISE IN THE SINGLE ELECTRON TRANSISTOR AND ITS BACK ACTION DURING MEASUREMENT

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