INFLUENCE OF SOLUTION RESISTIVITY AND POSTANODIZING TREATMENTS OF PS FILMS ON THE ELECTRICAL AND OPTICAL PROPERTIES OF METAL/PS/Si PHOTODIODES

机译：PS膜的固溶电阻率和后阳极氧化处理对金属/ PS / Si光电二极管的电和光学性能的影响

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An experimental study of the influence of solution resistivity and the effect of post-anodizing treatments of PS films on the electrical and optical properties of Metal/PS/Si photodiodes was performed. Porous silicon samples were made from p-Si in Ethylene-Glycol/HF or Ethanol/HF solutions of different concentrations. The anodised sample was left in the dark for different times in the HF/base electrolyte in which the porous layer had been fabricated, or in methanol. The results show a strong influence of the etching solution parameters and PS surface post-treatments on the kinetic changes of the device's electrical properties.

机译：对固溶电阻率的影响以及PS膜的阳极氧化后处理对Metal / PS / Si光电二极管的电学和光学性能进行了实验研究。多孔硅样品是由p-Si在不同浓度的乙二醇/ HF或乙醇/ HF中制成的。将阳极氧化后的样品在制造多孔层的HF /基础电解液中或甲醇中在黑暗中放置不同的时间。结果表明，蚀刻溶液参数和PS表面后处理对器件电学特性的动力学变化有很大影响。

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《NATO Advanced Study Institute on Photovoltaic and Photoactive Materials - Properties, Technology and Applications Sep 9-21, 2001 Sozopol, Bulgaria》|2001年|p.301-304|共4页
会议地点 Sozopol(BG)
作者
K. AIT-HAMOUDA; N. GABOUZE; T. HADJERSI; N. BENREKAA; R OUTEMZABET; H. CHERAGA; K. BELDJILALI; B.R MAHMOUDI;
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Unite de Developpement de la Technologie du Silicium (UDTS), 2 bd. Frantz Fanon, B.P. 399 Alger-Gare, Algiers, Algeria;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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INFLUENCE OF SOLUTION RESISTIVITY AND POSTANODIZING TREATMENTS OF PS FILMS ON THE ELECTRICAL AND OPTICAL PROPERTIES OF METAL/PS/Si PHOTODIODES

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