Influence of etching current density on microstructural, optical and electrical properties of porous silicon (PS):n-Si heterostructure

M. Das; P. Nath; D. Sarkar

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Influence of etching current density on microstructural, optical and electrical properties of porous silicon (PS):n-Si heterostructure

机译：刻蚀电流密度对多孔硅（PS）：n-Si异质结构的微观结构，光学和电学性质的影响

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In this article effect of etching current density (J) on the microstructural, optical and electrical properties of photoelectrochemically prepared heterostructure is reported. Prepared samples are characterized by FESEM, XRD, UV-Visible, Raman and photo-luminescence (PL) spectra and current-voltage (Ⅰ-Ⅴ) characteristics. FESEM shows presence of mixture of randomly distributed meso- and micro-pores. Porous layer thickness determined by cross section view of SEM is proportional to J. XRD shows crystalline nature but gradually extent of crystallinity decreases with increasing J. Raman spectra show large red-shift and asymmetric broadening with respect to crystalline silicon (c-Si). UV-visible reflectance and PL show blue shift in peaks with increasing J. The Ⅰ-Ⅴ characteristics are analyzed by the conventional thermionic emission (TE) model and Cheung's model to estimate the barrier height (φb), ideality factor (n) and series resistance (R_s) for comparison between the two models. The latter model is found to fit better.

机译：在本文中，报道了蚀刻电流密度（J）对光电化学制备的异质结构的微观结构，光学和电学性质的影响。制备的样品具有FESEM，XRD，紫外可见，拉曼光谱和光致发光（PL）光谱以及电流-电压（Ⅰ-Ⅴ）特征。 FESEM显示存在随机分布的中孔和微孔的混合物。通过SEM截面图确定的多孔层厚度与J成正比。XRD显示出晶体性质，但随着J的增加，结晶度逐渐降低。拉曼光谱显示出相对于晶体硅（c-Si）的大红移和不对称扩宽。紫外可见反射率和PL随着J的增加而出现峰蓝移。通过常规热电子发射（TE）模型和Cheung模型对Ⅰ-Ⅴ特性进行分析，以估计势垒高度（φb），理想因子（n）和级数电阻（R_s），以便在两个模型之间进行比较。发现后一种模型更合适。

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来源
《Superlattices and microstructures》 |2016年第2期|77-86|共10页
作者
M. Das; P. Nath; D. Sarkar;
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作者单位

Department of Physics, Gauhati University Cuwahati 781014, Assam, India;

Department of Physics, Gauhati University Cuwahati 781014, Assam, India;

Department of Physics, Gauhati University Cuwahati 781014, Assam, India;

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正文语种 eng
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关键词
Porous silicon; Etching current density; Heterostructure; Microstructure;

机译：多孔硅蚀刻电流密度;异质结构微观结构;

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1. Influence of Etching Current Density on Morphology of Porous Silicon Layer and the Electrical Properties of Sn/PS/p-Si/Al Double Junction [J] . Hasan A. Hadi, Intesar H. Hashim, Issam M. Ibrahim, Materials Focus . 2014,第6期

机译：刻蚀电流密度对多孔硅层形貌和Sn / PS / p-Si / Al双结电性能的影响
2. Morphological and optical properties of n-type porous silicon: effect of etching current density [J] . Das M., Sarkar D. Bulletin of Materials Science . 2016,第7期

机译：n型多孔硅的形貌和光学性质：蚀刻电流密度的影响
3. Morphological and optical properties of n-type porous silicon: effect of etching current density [J] . D SARKAR, M DAS Bulletin of materials science . 2016,第7期

机译：n型多孔硅的形貌和光学性质：蚀刻电流密度的影响
4. Nickel nanoparticles influence on the electrical properties of porous silicon obtained by the no-current electroless etching [C] . Bilenko D.I., Galushka V.V., Mysenko I.B., International Conference on Actual Problems of Electron Devices Engineering . 2012

机译：镍纳米粒子对通过无电流化学刻蚀获得的多孔硅的电性能的影响
5. Microstructural and chemical study of silicon dioxide/silicon carbide interfaces and correlations with electrical properties of silicon carbide MOS diodes and silicon carbide MOSFETs . [D] . Chang, Kai-Chieh. 2003

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6. Measurements of Microstructural Chemical Optical and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition [O] . Hong-Ping Ma, Hong-Liang Lu, Jia-He Yang, 2018

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7. Influence of applied current density on the nanostructural and light emitting properties of n-type porous silicon [O] . Çetinel A., Artunç N., Şahin G., 2015

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Influence of etching current density on microstructural, optical and electrical properties of porous silicon (PS):n-Si heterostructure

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