For the problem of small pore wall thickness and serious side etching in the channel opening during electrochemical etching ,based on the principle of electrochemical etching ,using PARSTAT 2273 electrochemical workstation and a homemade three-electrode etching system ,silicon microchannel samples were etched through a comparative experiment at current density of 30 mA/cm2 and 20 mA/cm2 .Then ,the samples were cut along the (100) crystal orientation after etching ,the pore wall thick-ness was observed by SEM .The results indicate the situation of channel wall thickness uneven has improved ,the side etching re-gion decreases from 70 μm to 30 μm ,a longer uniform region of silicon microchannel structure is obtained .%针对电化学刻蚀硅微通道过程中通道开口处壁厚值小，通道侧蚀严重的问题，基于电化学腐蚀原理，利用 PARSTAT 2273电化学工作站及自制的三电极电解槽刻蚀系统，通过一个对比实验，分别在30、20 mA／cm2的电流密度下刻蚀了硅微通道样品。刻蚀完成后，沿（100）晶向将样品切开，并利用扫描电子显微镜观察刻蚀完成后通道壁厚情况。实验结果表明，通道壁厚不均匀的情况得到了改善，侧蚀严重的深度从70μm下降到了30μm ，得到了壁厚均匀区域更长的硅微通道结构。
展开▼
