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POTENTIAL PV MATERIALS BASED ON InN POLYCRYSTALLINE FILMS: GROWTH, STRUCTURAL AND OPTICAL PROPERTIES

机译:基于Inn多晶硅薄膜的光伏材料:生长,结构和光学性能

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摘要

The fabrication details, plus the basic structural and optical properties of low temperature plasma enhanced reactionary sputtered (LTPERS) indium nitride thin films are presented. RHEED and AFM studies of surface morphology were performed. Optical absorption and reflectance spectra of textured films were taken, to reproduce accurately the dielectric function and to determine the optical effective mass of electrons (0.11) and the direct band gap energy (2.03 eV). Some TO (485 cm~(-1)) and LO (585 cm~(-1)) phonon features of InN polycrystalline films in the NIR and Raman spectra are observed and discussed. The attractive possibilities of InN layers are discussed, based on a model calculation of the InN/Si tandem system for potential applications in PV devices including high efficiency solar cells.
机译:介绍了制造细节,以及低温等离子体增强的反应溅射(LTPERS)氮化铟薄膜的基本结构和光学性能。进行了RHEED和AFM的表面形态研究。拍摄纹理膜的光吸收和反射光谱,以精确地重现介电函数,并确定电子的光学有效质量(0.11)和直接带隙能量(2.03 eV)。在NIR和拉曼光谱中观察并讨论了InN多晶薄膜的TO(485 cm〜(-1))和LO(585 cm〜(-1))声子特征。基于InN / Si串联系统的模型计算,讨论了InN层的诱人可能性,该模型适用于包括高效太阳能电池在内的PV器件。

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