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Optical properties of vertical silicon nanowire arrays with random position, diameter, or length

机译:具有随机位置,直径或长度的垂直硅纳米线阵列的光学特性

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The optical properties of ordered and disordered vertical silicon nanowire arrays, including random position, diameter, and length, are investigated using the finite-difference time-domain method. The ordered array with diameter of 100 nm shows overall small reflection and large absorption. An absorption peak is located at 2.4 eV, which is due to the optical resonance effect. Both randomly-positioned and random diameter arrays remain unreflective as the ordered array. The absorptance of randomly-positioned nanowire arrays has similar frequency dependence as ordered array, while it is enhanced due to the enhanced scattering. Random diameter array has a different absorptance profile and no evident absorption peak is observed, which is explained by the different resonant frequencies of the inclusion nanowires. Random length can create a random rough top surface on the nanowire arrays, which can reduce reflection and enhance absorption compared to uniform top surface.
机译:使用有限差分时域方法研究了有序和无序的垂直硅纳米线阵列的光学特性,包括随机位置,直径和长度。直径为100 nm的有序阵列显示出整体的小反射和大吸收。吸收峰位于2.4 eV,这是由于光学共振效应引起的。随机放置的直径阵列和随机直径的阵列都不会像有序阵列一样反射。随机放置的纳米线阵列的吸收率与有序阵列具有相似的频率依赖性,但由于增强的散射而提高了吸收率。随机直径阵列具有不同的吸收率分布,并且没有观察到明显的吸收峰,这是由包裹体纳米线的不同共振频率所解释的。随机长度可以在纳米线阵列上创建随机的粗糙顶表面,与均匀顶表面相比,可以减少反射并增强吸收。

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