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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >TO IMPROVE UNIFORMITY OF THERMAL BUDGET AND FILM QUALITY IN BATCH TYPE PROCESS BY ADDING IN-SITU ANNEAL
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TO IMPROVE UNIFORMITY OF THERMAL BUDGET AND FILM QUALITY IN BATCH TYPE PROCESS BY ADDING IN-SITU ANNEAL

机译：通过添加原位附件来提高批处理过程中热预算和电影质量的一致性

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摘要

As design rule shrinkage, loading effect is getting obvious due to topography and surface density increase on the wafer surface. It caused lot to lot (wafer to wafer, too) film quality and thermal budget deviation much across the furnace tube, subsequent processes and yield are impacted. The worse uniformity can be improved with applied an in-situ anneal step in the recipe. To balance the thermal budget of furnace position by different temperature setting for each heater zone. It was found much improvement in wafer to wafer uniformity of film quality and device parameters electric test by using this method. It's valuable to introduce in all batch type furnace process for non uniformity reduction with quite simple anneal step.
机译：随着设计规则的缩小，由于形貌和晶片表面上的表面密度增加，加载效果变得越来越明显。这会导致整个炉管之间的批次间（晶圆对晶圆）薄膜质量和热预算偏差也很大，从而影响后续工艺和成品率。在配方中采用原位退火步骤可以改善较差的均匀性。通过为每个加热器区域设置不同的温度来平衡炉位置的热预算。通过使用该方法，发现晶片到晶片的膜质量均匀性和器件参数电测试有很大改善。对于所有批次式炉工艺而言，通过非常简单的退火步骤降低不均匀性是很有价值的。

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