EVALUATION OF LOW-K POROUS SILICA FILMS INCORPORATED WITH ETHYLENE GROUPS

机译：含乙烯基的低k多孔硅膜的评价

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Porous silica films incorporated with ethylene groups prepared by using hydrolysis and condensation of BIS (Triethoxysilyl) Ethylene (BTE) and H_2O contained with HC1 as a catalyst and 2-Methylpentane-2,4-diol (MPD) was evaluated. Density of the film having k=1.9 was about 1.0 g/cm~3 and porosity was about 56%. It was confirmed that MPD was desorbed from the film about 450℃.

机译：评价了通过使用BIS（三乙氧基甲硅烷基）乙烯（BTE）和H1O所含的H_2O作为催化剂和2-甲基戊烷-2,4-二醇（MPD）进行水解和缩合而制备的并入有乙烯基的多孔二氧化硅膜。 k ＝ 1.9的膜的密度为约1.0g / cm 3，并且孔隙率为约56％。证实了MPD在约450℃下从膜上解吸。

著录项

来源
《Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore》|2002年|p.34-40|共7页
会议地点 Singapore(SG);Singapore(SG)
作者
Yasutaka Uchida; Takashi Katoh; Masako Oikawa;
展开▼
作者单位

Department of Media Science, Teikyo University of Science and Technology Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0193 JAPAN;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Evaluation of low-k porous silica films incorporated with ethylene groups [J] . Yasutaka Uchida, Takashi Katoh, Masako Oikawa 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2002,第637期

机译：评估带有乙烯基的低k多孔二氧化硅薄膜
2. Evaluation of low-k porous silica films incorporated with ethylene groups [J] . Yasutaka Uchida, Takashi Katoh, Masako Oikawa 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2002,第637期

机译：用乙烯掺入低k多孔二氧化硅膜的评价
3. Temperature Dependence of Porogen Desorption from Low-k Porous Silica Films Incorporated with Ethylene Groups [J] . Yasutaka UCHIDA, Yoshiyuki MARUYAMA, Tomohiro KATOH, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

机译：含乙烯基的低k多孔二氧化硅膜中孔隙解吸温度的温度依赖性
4. Evaluation of Low-k porous silica film incorporated with ethylene groups [C] . Yasutaka Uchida, Masako Oikawa ECS Meeting . 2003

机译：用乙烯掺入低k多孔二氧化硅膜的评价
5. Control and design of critical properties of PECVD carbon doped low-k silica thin films by deposition methods and film thickness. [D] . Zhou, Hong. 2002

机译：通过沉积方法和膜厚控制和设计PECVD碳掺杂低k二氧化硅薄膜的关键性能。
6. Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C [O] . R. Chanson, L. Zhang, S. Naumov, -1

机译：在−50°C以上的条件下使用微毛细管冷凝对多孔有机硅低k进行无损等离子体刻蚀
7. Evaluation of Pore Structure in Pure Silica Zeolite MFI Low-k Thin Films Using Positronium Annihilation Lifetime Spectroscopy [O] . Shuang Li, Jianing Sun, Zijian Li, 2009

机译：用正电子湮没寿命光谱法评价纯二氧化硅沸石mFI低k薄膜的孔结构

EVALUATION OF LOW-K POROUS SILICA FILMS INCORPORATED WITH ETHYLENE GROUPS

摘要

著录项

相似文献

相关主题

期刊订阅