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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >Synthesis and Characterization of Low Dielectric Constant Nanoporous Silica From HSQ Oligomers
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Synthesis and Characterization of Low Dielectric Constant Nanoporous Silica From HSQ Oligomers

机译：HSQ低聚物合成低介电常数纳米多孔二氧化硅及其表征

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摘要

In this study, nanoporous silica films were prepared from the poly (hydrogen silsesquioxane) (HSQ) oligomers and coupling agent, triphenylsilanol (TPS) by templating. The molecular structures of the HSQ oligomers could be controlled by the reaction conditions, including cageetwork ratio, molecular weight, and OH end group content. These molecular parameters played an important role on controlling the pore size distribution and their dielectric constants. The experimental results showed that more cage structure could be obtained at a higher water/monomer ratio (R_1) and pH value. The molecular weight decreased with increasing the pH value. Increasing R_1 first enhanced molecular weight of the prepared HSQ and then decreased. The cage structure of the Si-O-Si in the HSQ thin films transformed to network structure with increasing curing temperature, which resulted in significant variations in the physical properties. The dielectric constant was varied from 2.74 to 3.01 for various chemical structures of the HSQ oligomers. The dielectric constant of the prepared nanoporous thin films from HSQ/TPS could be reduced form 2.96 to 1.85 by increasing the added TPS. The refractive index, porosity, and SEM results supported the formation of porous structure in the prepared films. These materials could be important for low dielectric constant applications.
机译：在这项研究中，纳米聚氧化硅薄膜是由聚（氢倍半硅氧烷）（HSQ）低聚物和偶联剂三苯基硅烷醇（TPS）通过模板制备的。 HSQ低聚物的分子结构可通过反应条件控制，包括笼/网络比，分子量和OH端基含量。这些分子参数在控制孔径分布及其介电常数方面起着重要作用。实验结果表明，较高的水/单体比（R_1）和pH值可以获得更多的笼状结构。分子量随着pH值的增加而降低。 R_1的增加首先会提高所制备HSQ的分子量，然后降低。随着固化温度的升高，HSQ薄膜中Si-O-Si的笼状结构转变为网络结构，这导致物理性能发生重大变化。对于HSQ低聚物的各种化学结构，介电常数在2.74至3.01之间变化。通过增加TPS可以将HSQ / TPS制备的纳米多孔薄膜的介电常数从2.96降低到1.85。折射率，孔隙率和SEM结果支持所制备的膜中多孔结构的形成。这些材料对于低介电常数应用可能很重要。

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