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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >ANNEALING INFLUENCE ON DEFECTS AND ATOMIC STRUCTURE OF POROUS ORGANIC LOW-K DIELECTRICS
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ANNEALING INFLUENCE ON DEFECTS AND ATOMIC STRUCTURE OF POROUS ORGANIC LOW-K DIELECTRICS

机译：退火对多孔有机低k电介质的缺陷和原子结构的影响

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摘要

The porous organic dielectric (POD) films are spin-coated on the silicon wafer. The samples are then annealed in argon or nitrogen ambient at different (from 300 to 650℃) temperatures. Annealing times equals to 30 min (for argon) and one hour (for nitrogen). Deep-level-transient-spectroscopy (DLTS) technique for characterization defect electron states spectrum N(E) in the material, and specular X-ray reflectivity (XRR) is applied to determine the mass density of the dielectric film. Annealing in the argon practically does not affect shape of the N(E) distribution in the material bandgap at the annealing temperature up to 600℃. On the other hand, increment of annealing temperature in nitrogen ambient leads to strong alteration of the N(E) shape. The mass density of the POD has been deduced from so-called 'critical angle' of the XRR reflectivity and is influenced significantly with the annealing. Mass density of the films after nitrogen annealing is essentially higher than ones after annealing in argon at the same temperatures. Chemical absorption of nitrogen on the intra-pore surface can be responsible for this effect.
机译：将多孔有机电介质（POD）膜旋涂在硅晶片上。然后将样品在氩气或氮气环境中以不同的温度（从300到650℃）进行退火。退火时间等于30分钟（对于氩气）和一小时（对于氮气）。用于表征材料中缺陷电子态光谱N（E）的深层瞬态光谱（DLTS）技术以及镜面X射线反射率（XRR）用于确定介电膜的质量密度。实际上，在高达600℃的退火温度下，氩气退火不会影响带隙中N（E）分布的形状。另一方面，在氮气环境中退火温度的升高导致N（E）形状的强烈变化。 POD的质量密度已从XRR反射率的所谓“临界角”推导出来，并受到退火的显着影响。在相同温度下，氮气退火后的薄膜质量密度基本上高于氩气退火后的薄膜。氮在孔内表面的化学吸收可能是造成这种效应的原因。

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