Polymers Removal of Deep Trench Etch Process for Cu/Low-k RF Inductors

机译：Cu / Low-k射频电感器的深沟槽蚀刻工艺中的聚合物去除

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The etching of 2μm deep inductor trenches on organosilicate glass (OSG) low-k dieletric film in C_4F_8/N_2/Ar chemistry has introduced a large amount of polymer along sidewalls. Commonly used amine-based semi-aqueous chemical wet cleaning after photo resist strip is incapable of removing them, rather, this chemical treatment alone causes swelling and partial peeling of polymers from the dielectric sidewalls. The polymer residues can have adverse effects on the electrical performance of Cu conductors and inductors, moreover, impose risks to the device reliability. In this paper, we discuss the development of a dry plasma cleaning process that can effectively remove the stubborn polymers. Coupling this dry clean process with wet clean chemical as a post treatment gives the optimum result.

机译：在C_4F_8 / N_2 / Ar化学反应中，在有机硅玻璃（OSG）低k介电膜上蚀刻2μm的深感应沟槽的过程已沿侧壁引入了大量的聚合物。光刻胶剥离后，常用的胺基半水化学湿法清洗无法去除它们，相反，仅此化学处理会导致聚合物从电介质侧壁溶胀和部分剥离。聚合物残留物可能会对铜导体和电感器的电性能产生不利影响，此外，还会对设备可靠性造成威胁。在本文中，我们讨论了可以有效去除顽固聚合物的干法等离子体清洁工艺的发展。将此干法清洗过程与湿法化学清洗剂相结合作为后处理，可获得最佳结果。

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来源
《Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore》|2002年|p.319-322|共4页
会议地点 Singapore(SG);Singapore(SG)
作者
K. P. Yap; V. N. Bliznetsov; C. K. Chang; M. B. Yu; A. Y. Du;
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Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685.;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Polymers Removal of Deep Trench Etch Process for Cu/Low-k RF Inductors

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