首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >Impact of via and upper layer formation on electromigration failure mechanism of lower layers in dual-damascene Cu interconnects
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Impact of via and upper layer formation on electromigration failure mechanism of lower layers in dual-damascene Cu interconnects

机译:通孔和上层形成对双镶嵌铜互连中下层电迁移破坏机理的影响

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摘要

Electromigration of dual damascene Cu interconnects as well as the impact of via and upper layer formation on the lower layers were investigated by using two types of via terminated structures. Electromigration performance of Ml is significantly different from that of M2 even though the degradation profiles are similar. The interface between SiN and Cu is the fast diffusion path in electromigration of both Ml and M2. However, the void location of Ml is different from that of M2, and activation energy of interface diffusion between SiN and Cu of Ml is much lower than that of M2. This clearly demonstrates that the fabrication process of dual damascene structures such as via and M2 strongly affects the microstructure of Ml and significantly degrades Ml electromigration lifetime.
机译:通过使用两种类型的通孔端接结构,研究了双镶嵌铜互连的电迁移以及通孔和上层形成对下层的影响。即使降解曲线相似,M1的电迁移性能也与M2明显不同。 SiN和Cu之间的界面是M1和M2两者的电迁移中的快速扩散路径。然而,M1的空隙位置不同于M2的空隙位置,并且M1的SiN和Cu之间的界面扩散的活化能远低于M2的空隙。这清楚地证明了双镶嵌结构(例如通孔和M2)的制造过程强烈影响了M1的微结构,并显着降低了M1电迁移寿命。

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