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Yield analysis of Cross-bridge Kelvin via resistors

机译:跨桥开尔文通过电阻的产量分析

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摘要

Cross-bridge type Kelvin via resistors' yield was found to be consistently low when the via overlap with trench was 0.01 μm. The high resistance of such resistors was due to corner rounding of trench that contacts the via bottom. The inevitable corner rounding occurred due to trench corners receiving low UV light during photolithography. This corner rounding also caused trapping of etch residues at via bottom and thereby increased the resistance to above design specifications. To improve the KVM yield, alteration at photomask design level is necessary.
机译:当与沟槽的通孔重叠为0.01μm时,发现跨桥型开尔文过孔电阻器的产量始终较低。这样的电阻器的高电阻是由于与通孔底部接触的沟槽的拐角变圆。由于沟槽角在光刻期间接收到低的紫外线,因此不可避免地发生了角部倒圆。这种圆角倒圆还导致蚀刻残留物滞留在通孔底部,从而提高了对上述设计规格的抵抗力。为了提高KVM产量,有必要在光掩模设计级别进行更改。

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