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首页> 外文会议>Nitride semiconductors >PHOTOLUMINESCENCE CHARACTERISTICS OF GaN LAYERS GROWN ON SOI SUBSTRATES AND RELATION TO MATERIAL PROPERTIES
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PHOTOLUMINESCENCE CHARACTERISTICS OF GaN LAYERS GROWN ON SOI SUBSTRATES AND RELATION TO MATERIAL PROPERTIES

机译：在SOI衬底上生长的GaN层的光致发光特性及其与材料性能的关系

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摘要

GaN layers were grown by MOCVD on Silicon on Insulator (SOI) substrates in an effort to improve the material quality compared to more traditionally employed sapphire substrates. Their photoluminescence properties are reported and found to exhibit an intense and relatively large PL band around 3.47eV at low temperature (7K). This is about 10meV lower than the PL energy of samples grown on sapphire substrates and suggests the presence of lower strain in the layers which is expected for compliant growth on SOI substrates. The shape of the main PL peak appears to indicate that Silicon diffusion takes place from the substrate during growth. The behavior of the PL spectra is studied as a function of temperature. The GaN films show good overall electrical properties with Hall mobilities at room temperature in the range of 150 to 300cm~2/Vs and background carrier concentration from 2.9 to 3.9×10~(19)cm~(-3). The promising optical and electronic features of these layers could be of great interest for the development of high quality optical and electronic devices.
机译：GaN层是通过MOCVD在绝缘体上硅（SOI）衬底上生长的，旨在与传统上采用的蓝宝石衬底相比，提高材料质量。据报道，它们的光致发光特性在低温（7K）下表现出3.47eV附近的相对较大的PL带。这比在蓝宝石衬底上生长的样品的PL能量低约10meV，表明在层中存在较低的应变，这有望在SOI衬底上顺应性生长。 PL主峰的形状似乎表明在生长过程中发生了硅从衬底扩散的现象。研究了PL光谱的行为与温度的关系。 GaN薄膜具有良好的整体电学性能，室温下的霍尔迁移率在150至300cm〜2 / Vs范围内，背景载流子浓度为2.9至3.9×10〜（19）cm〜（-3）。这些层的有希望的光学和电子特征对于高质量光学和电子设备的开发可能具有极大的兴趣。

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  • 来源
    《Nitride semiconductors》|1997年|307-312|共6页
  • 会议地点 Boston MA(US)
  • 作者

    A. PHILIPPE; C. BRU-CHEVALLIER; G. GUILLOT; J. CAO; D. PAVLIDIS; A. EISENBACH;

  • 作者单位

    Laboratoire de Physique de la Matiere (UMR CNRS 5511) - INSA de Lyon - Bat 502 -69621 Villeurbanne Cedex, France;

    Laboratoire de Physique de la Matiere (UMR CNRS 5511) - INSA de Lyon - Bat 502 -69621 Villeurbanne Cedex, France;

    Laboratoire de Physique de la Matiere (UMR CNRS 5511) - INSA de Lyon - Bat 502 -69621 Villeurbanne Cedex, France;

    The University of Michigan, Department of Electrical Engineering Computer Science, 1301 Beal Ave., Ann Arbor, MI 48109-2122, USA;

    The University of Michigan, Department of Electrical Engineering Computer Science, 1301 Beal Ave., Ann Arbor, MI 48109-2122, USA;

    The University of Michigan, Department of Electrical Engineering Computer Science, 1301 Beal Ave., Ann Arbor, MI 48109-2122, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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