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OPTICAL PROPERTIES OF InGaN/GaN MULTI QUANTUM WELL STRUCTURES

机译：InGaN / GaN多量子阱结构的光学性质

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摘要

A set of GaN/InGaN multiple quantum wells (QWs) with well thickness 30 A and barrier thickness 60 A were grown by MOCVD on sapphire substrates. The n-type Si doping of the InGaN QWs was varied, in order to produce a different electron concentration in the QWs for the different samples. Optical spectra were obtained by time resolved photoluminescence spectroscopy. The data show weak excitonic spectra from the QWs as well as a broad deeper emission with a much stronger intensity. The spectral shape becomes narrower and the energy position shifts to higher energies with increasing doping. The two different emissions are not easily separated in CW or time integrated spectra, but are clearly observed in a time resolved spectral measurement due to their different recombination rates. The deeper emission has a long and non-exponential decay, with an average decay time in the order of several hundred nanoseconds. The higher energy exciton emission has a much faster decay of about 1 ns. The lower energy band is tentatively explained as due to separately localized electron-hole (e-h) pairs in the QW.
机译：通过MOCVD在蓝宝石衬底上生长一组具有阱厚度30 A和势垒厚度60 A的GaN / InGaN多量子阱（QW）。改变InGaN QW的n型Si掺杂，以便在不同样品的QW中产生不同的电子浓度。通过时间分辨光致发光光谱法获得光谱。数据显示了来自量子阱的弱激子光谱以及强度更大得多的更深的宽发射。光谱形状变得更窄，并且随着掺杂的增加，能量位置转移到更高的能量。两种不同的发射物在CW或时间积分光谱中不容易分离，但由于它们的复合率不同，因此在时间分辨光谱测量中可以清楚地观察到。较深的发射具有长且非指数的衰减，平均衰减时间约为数百纳秒。较高能量的激子发射具有约1 ns的更快衰减。尝试将较低的能带解释为归因于QW中的单独定位的电子-空穴（e-h）对。

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  • 来源
    《Nitride semiconductors》|1997年|631-636|共6页
  • 会议地点 Boston MA(US)
  • 作者

    J.P. Bergman; N. Saksulv; J. Dalfors; P.O. Holtz; B. Monemar; H. Amano; I. Akasaki;

  • 作者单位

    Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden.;

    Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden.;

    Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden.;

    Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden.;

    Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden.;

    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan.;

    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan.;

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  • 正文语种 eng
  • 中图分类 材料;
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