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首页> 外文会议>Nitride semiconductors >CUBIC InN INCLUSIONS AS THE CAUSE FOR THE UNUSUALLY WEAK PRESSURE SHIFT OF THE LUMINESCENCE IN InGaN
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CUBIC InN INCLUSIONS AS THE CAUSE FOR THE UNUSUALLY WEAK PRESSURE SHIFT OF THE LUMINESCENCE IN InGaN

机译：CUBIC InN的原因是InGaN的发光异常弱的压力漂移

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摘要

We propose a new approach to explain the unusually low pressure coefficients of the luminescence peaks observed in single-quantum-well InGaN-based light emitting diodes manufactured by Nichia Chemical Industries. In view of the most recent first principles band structure calculations for InN under hydrostatic pressure, we find that it is possible to reproduce the measured low (12-16meV/GPa) pressure coefficients of the luminescence by assuming the formation of zincblende InN inclusions in the InGaN quantum well layers. These cubic inclusions, surrounded by the usual wurtzite material, should act like quantum dots giving rise to enhanced electron localization. Obtained this way, the pressure shift of the luminescence peaks in blue and green InGaN-based emitters should be close to 14meV/GPa, in good agreement with our experimental results. This explanation of the observed low pressure coefficients in these devices is consistent with recent independent evidence for InN inclusions in InGaN epilayers.
机译：我们提出了一种新的方法来解释日亚化学工业公司（Nichia Chemical Industries）生产的基于单量子阱InGaN的发光二极管中观察到的发光峰的异常低的压力系数。鉴于在静水压力下InN的最新的第一原理带结构计算，我们发现有可能通过假设锌闪闪发光InN夹杂物的形成来再现测得的发光的低（12-16meV / GPa）压力系数。 InGaN量子阱层。这些立方夹杂物被普通纤锌矿材料包围，应像量子点一样起作用，从而增强了电子的局域性。通过这种方式获得的结果是，蓝色和绿色的InGaN基发射极的发光峰的压力漂移应接近14meV / GPa，与我们的实验结果非常吻合。这些器件中观察到的低压系数的解释与InGaN外延层中InN夹杂物的最新独立证据一致。

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  • 来源
    《Nitride semiconductors》|1997年|697-702|共6页
  • 会议地点 Boston MA(US)
  • 作者

    Piotr Perlin; Bernard A. Weinstein; Niels E. Christensen; Iza Gorczyca; Valentin Iota; Tadeusz Suski; Przemek Wisniewski; M. Osinski; P.G. Eliseev;

  • 作者单位

    Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720 On leave from High Pressure Research Center, Warsaw, Poland;

    Physics Department SUNY at Buffalo;

    Institute of Physics and Astronomy, Aarhus University, Denmark;

    High Pressure Research Center, Polish Academy of Sciences, Warszawa, Poland;

    Physics Department SUNY at Buffalo;

    High Pressure Research Center, Polish Academy of Sciences, Warszawa, Poland;

    High Pressure Research Center, Polish Academy of Sciences, Warszawa, Poland;

    Center for High Technology Materials, University of New Mexico, Albuquerque;

    Center for High Technology Materials, University of New Mexico, Albuquerque;

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  • 正文语种 eng
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