OBSERVATION OF NATIVE Ga VACANCIES IN GaN BY POSITRON ANNIHILATION

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• 来源
  《Nitride semiconductors》|1997年|757-762|共6页
• 会议地点 Boston MA(US)
• 作者

  K. SAARINEN; T. LAINE; S. KUISMA; J. NISSILA; P. HAUTOJARVI; L. DOBRZYNSKI; J. M. BARANOWSKI; K. PAKULA; R. STEPNIEWSKI; M. WOJDAK; A. WYSMOLEK; T. SUSKI; M. LESZCZYNSKI; I. GRZEGORY; S. POROWSKI;

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• 作者单位

  Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland;

  Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland;

  Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland;

  Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland;

  Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland;

  Institute of Physics, Warsaw University Branch, Lipowa 41, 15-424 Bialystok and Soltan Institute of Nuclear Studies, 05-400 Otwock - Swierk, Poland;

  Institute of Experimental Physics, University of Warsaw, 00-681 Warsaw, Poland;

  Institute of Experimental Physics, University of Warsaw, 00-681 Warsaw, Poland;

  Institute of Experimental Physics, University of Warsa;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 材料;
• 关键词