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首页> 外文会议>Nitride semiconductors >GROWTH OF GAN ON LITHIUM GALLATE SUBSTRATES FOR DEVELOPMENT OF A GaN THIN COMPLIANT SUBSTRATE
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GROWTH OF GAN ON LITHIUM GALLATE SUBSTRATES FOR DEVELOPMENT OF A GaN THIN COMPLIANT SUBSTRATE

机译：镓在锂镓酸盐基体上的生长，用于开发GaN薄膜兼容基质。

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摘要

The GaN on LGO system is the near perfect template (due to extremely high etch selectivity) for developing a viable thin film/compliant GaN substrate. Herein, we report on our efforts to grow GaN on LGO, including improvement of the microscopic surface morphology using pre-growth pre-treatments. We also report on the first transferred thin film GaN substrate grown on LGO, transferred off of LGO, and mounted on GaAs. With this approach, (InAl)GaN alloys can be grown on thin GaN films, implementing a truly "compliant" substrate for the nitride alloy system. In addition, the flexibility of bonding to low cost Si, metal or standard ceramic IC packages is an attractive alternative to SiC and HVPE GaN substrates for optimizing cost verses thermal conductivity concerns. We have demonstrated high quality growth of GaN on LGO. X-Ray rocking curves of 145 arc-seconds are obtained with only a 0.28 μm thick film. We present data on the out of plane crystalline quality of GaN/LGO material. Likewise, we show 2 orders of magnitude improvement in residual doping concentration and factors of 4 improvement in electron mobility as compared to the only previously reported electrical data. We show substantial vendor to vendor and intra-vendor LGO material quality variations. We have also quantified the desorption of Ga and Li from the surface of LGO at typical growth temperatures using in situ desorption mass spectroscopy and XPS.
机译：LGO系统上的GaN是用于开发可行的薄膜/柔性GaN基板的近乎完美的模板（由于极高的蚀刻选择性）。在此，我们报告了我们在LGO上生长GaN的努力，包括使用预生长预处理改善了微观表面形态。我们还报告了在LGO上生长，从LGO转移并安装在GaAs上的第一个转移薄膜GaN衬底。通过这种方法，可以在GaN薄膜上生长（InAl）GaN合金，从而为氮化物合金系统实现真正的“顺应性”衬底。此外，结合到低成本的Si，金属或标准陶瓷IC封装的灵活性是SiC和HVPE GaN衬底的一种有吸引力的替代方案，以优化成本而无需考虑导热性。我们已经证明了LGO上GaN的高质量增长。仅0.28μm厚的薄膜可获得145弧秒的X射线摇摆曲线。我们提供有关GaN / LGO材料的面外晶体质量的数据。同样，与仅先前报告的电学数据相比，我们显示出残留掺杂浓度提高了2个数量级，电子迁移率提高了4倍。我们展示了不同供应商之间以及供应商内部LGO的材料质量差异。我们还使用原位解吸质谱和XPS对在典型生长温度下LGO表面的Ga和Li的解吸进行了量化。

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  • 来源
    《Nitride semiconductors》|1997年|283-288|共6页
  • 会议地点 Boston MA(US)
  • 作者

    W. A. DOOLITTLE; T. KROPEWNICKI; C. CARTER-COMAN; S. STOCK; P. KOHL; N. M. JOKERST; R. A. METZGER; S. KANG; K. LEE; G. MAY; A. S. BROWN;

  • 作者单位

    Georgia Institute of Technology, School of Electrical and Computer Eng., Atlanta, GA 30332-0250;

    Georgia Institute of Technology, School of Chemical Eng., Atlanta, GA 30332-0100;

    Georgia Institute of Technology, School of Electrical and Computer Eng., Atlanta, GA 30332-0250;

    Georgia Institute of Technology, School of Materials Science and Eng., Atlanta, GA 30332-0245;

    Georgia Institute of Technology, School of Chemical Eng., Atlanta, GA 30332-0100;

    Georgia Institute of Technology, School of Electrical and Computer Eng., Atlanta, GA 30332-0250;

    Georgia Institute of Technology, School of Electrical and Computer Eng., Atlanta, GA 30332-0250;

    Georgia Institute of Technology, School of Electrical and Computer Eng., Atlanta, GA 30332-0250;

    Georgia Institute of Technology, School of Electrical and Comput;

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  • 正文语种 eng
  • 中图分类 材料;
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