Acceptor Binding Energies in GaN and AlN

机译：GaN和AlN中的受体结合能

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We present binding energy calculations for Mg, Zn, and C substitutional shallow acceptors in GaN and AlN for both, wurtzite (WZ) and zincblende (ZB) crystal phases. The calculations are performed within the effective mass theory through the 6×6 Rashba-Sheka-Pikus and the Luttinger-Kohn matrix Hamiltonians for WZ and ZB bulk crystals, respectively. An analytic representation for the pseudopotential is used to introduce the nature of the impurity atom. The energy shift due to polaron effects is also considered in this approach. The estimated ionization energies are in good agreement with those reported experimentally and those reported theoretically employing other methods. We find that the binding energies for ZB GaN acceptors are shallower than the corresponding impurities in the WZ crystalline phase. The binding energy dependence upon the crystal field splitting in the WZ compounds is analyzed.

机译：我们介绍了纤锌矿（WZ）和闪锌矿（ZB）晶体相中GaN和AlN中Mg，Zn和C替代浅受体的结合能计算。在有效质量理论中，分别通过6×6 Rashba-Sheka-Pikus和Luttinger-Kohn矩阵哈密顿量用于WZ和ZB块晶体进行计算。伪电势的解析表示法用于介绍杂质原子的性质。在这种方法中还考虑了由于极化子效应引起的能量转移。估计的电离能与实验报道的和理论上采用其他方法报道的电离能非常吻合。我们发现ZB GaN受体的结合能比WZ结晶相中的相应杂质浅。分析了结合能对WZ化合物中晶体分裂的依赖性。

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来源
《Nitride semiconductors》|1997年|839-844|共6页
会议地点 Boston MA(US)
作者
FRANCISCO MIRELES; SERGIO E. ULLOA;
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Department of Physics Astronomy and Condensed Matter Surface Sciences Program Ohio University, Athens OH 45701-2979;

Department of Physics Astronomy and Condensed Matter Surface Sciences Program Ohio University, Athens OH 45701-2979;

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原文格式 PDF
正文语种 eng
中图分类材料;
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专利

1. Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and Mg-Ga delta-doping (AlN)(5)/(GaN)(1): the strain effect [J] . Jiang Xin-He, Shi Jun-Jie, Zhang Min, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2015,第47期

机译：减少GaN，AlN，Al0.83Ga0.17N和Mg-Gaδ掺杂（AlN）（5）/（GaN）（1）中的Mg受体活化能：应变效应
2. Acceptor binding energies in GaN and AlN [J] . Mireles F., Ulloa SE. Physical Review, B. Condensed Matter . 1998,第7期

机译：GaN和AlN中的受体结合能
3. Reducing Mg Acceptor Activation-Energy in Al_0.83Ga_0.17N Disorder Alloy Substituted by Nanoscale (AlN)₅/(GaN)₁ Superlattice Using Mg_Ga δ-Doping: Mg Local-Structure Effect [J] . Hong-xia Zhong, Jun-jie Shi, Min Zhang, Scientific reports. . 2014,第1期

机译：降低纳米（AlN）_{5 /（GaN）_{1替代的Al _{0.83 Ga _{0.17 N无序合金中Mg受体的活化能Mg _{Ga δ掺杂的超晶格：Mg局部结构效应}}}}}
4. Acceptor Binding Energies in GaN and AlN [C] . Symposium on nitride semiconductors . 1998

机译：GaN和ALN中的受体绑定能量
5. GaN-On-AlN as a Platform for High-Voltage Complementary Electronics [D] . Bader, Samuel James. 2020

机译：Gan-On-Aln作为高压互补电子设备的平台
6. Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect [O] . Hong-xia Zhong, Jun-jie Shi, Min Zhang, -1

机译：使用MgGaδ掺杂降低纳米（AlN）5 /（GaN）1超晶格替代的Al0.83Ga0.17N无序合金中Mg受体的活化能：Mg局部结构效应
7. Acceptor binding energies in GaN and AlN [O] . Mireles, Francisco, Ulloa, Sergio E. 1998

机译：受体结合能在GaN和alN中
8. Selected Energy Epitaxial Deposition (SEED) and Low Energy Electron Microscopy (LEEM) of AlN, GaN and SiC Thin Films [R] . Davis, R. F. 2000

机译：alN，GaN和siC薄膜的选定能量外延沉积（sEED）和低能电子显微镜（LEEm）

Acceptor Binding Energies in GaN and AlN

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