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ANALYSIS OF OPTICAL GAlN OF STRAlNED WURTZITE In_xGa_(1-x)N/GaN QUANTUM WELL LASERS

机译：扭曲纤锌矿In_xGa_（1-x）N / GaN量子阱激光的光学GaIn分析

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摘要

The valence subband structures, density-of-states, and optical gAlN of (0001) wurtzite (WZ) In_xGa_(1-x)N/GaN quantum wells (QWs) are studied using a numerical approach without analytical approximations. We used the effective-mass parameters of GaN and InN derived using the Empirical Pseudopotential Method. By varying the well width and mole fraction of In in the well material, the effects of quantum confinement and compressive strAlN are studied. A narrower well width and a higher In mole fraction in the well lead to TE enhancement and TM suppression of the optical gAlN. From the relationship between the optical gAlN and the radiative current density, we obtAlN the transparent current density for a single QW to be 200 A/cm~2. Further, we analyze the In_xGa_(1-x)N/GaN/AlGaN separate confinement heterostructure multiple-QW laser structure. It is shown that a suitable combination of well width and number of QWs should be selected in optimizing the threshold current density in such MQW lasers.
机译：使用数值方法研究了（0001）纤锌矿（WZ）In_xGa_（1-x）N / GaN量子阱（QWs）的价子带结构，态密度和光学gAlN。我们使用通过经验伪电势方法得出的GaN和InN的有效质量参数。通过改变阱材料中In的阱宽度和摩尔分数，研究了量子限制和压缩strAlN的影响。较窄的阱宽和较高的In摩尔分数会导致光学gAlN的TE增强和TM抑制。从光学gAlN与辐射电流密度之间的关系，我们得出单个QW的透明电流密度为200 A / cm〜2。此外，我们分析了In_xGa_（1-x）N / GaN / AlGaN分离限制异质结构多量子阱激光器结构。结果表明，在优化此类MQW激光器的阈值电流密度时，应选择阱宽度和QW数量的适当组合。

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  • 来源
    《Nitride semiconductors》|1997年|1119-1124|共6页
  • 会议地点 Boston MA(US)
  • 作者

    T. C. CHONG; Y. C. YEO; M. F. LI; W. J. FAN;

  • 作者单位

    Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, SI 19260, Singapore;

    Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, SI 19260, Singapore;

    Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, SI 19260, Singapore;

    Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, SI 19260, Singapore;

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  • 正文语种 eng
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