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FINE STRUCTURE AND MAGNETOOPTICS OF EXCITONIC LEVELS IN WURTZITE GaN

机译：纤锌矿型GaN激发态的精细结构和磁光学性质。

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We present a comprehensive study of the direct photoluminescence from excitonic states in GaN using polarization-dependent and magnetooptical measurements in fields up to 15 T. We measure and identify fine-structure splittings in the states n=l and n=2 of the A-exciton. The splitting between the energy levels of longitudinal and transverse states in the A-exciton is 0.96 meV. Emission from the spin triplet exciton in the state n=l is observed. We also identify emissions from three sublevels of the state n=2 of the A-exciton. From the analysis of our data we obtain the effective-mass parameters of electrons and holes, g-values and the Rydberg energy of the A-exciton.

机译：我们使用在15 T以下磁场中依赖于偏振和磁光的测量方法，对GaN中激子态的直接光致发光进行了全面研究。我们测量并确定了A-态n = l和n = 2时的精细结构分裂激子。 A激子中纵向和横向能级之间的能级分裂为0.96 meV。观察到自旋三重态激子在状态n = 1下的发射。我们还确定了来自A激子状态n = 2的三个子级别的排放。通过对我们的数据进行分析，我们可以获得电子和空穴的有效质量参数，g值以及A激子的Rydberg能量。

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来源
《Nitride semiconductors》|1997年|555-560|共6页
会议地点 Boston MA(US)
作者
L. ECKEY; A. HOFFMANN; P. THURIAN; I. BROSER; B. K. MEYER; K. HIRAMATSU;
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Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

I. Physikalisches Institut, Justus-Liebig-Universitaet, GieBen, Germany;

Mie University, Department of Electrical and Electronic Engineering, Mie, Japan;

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正文语种 eng
中图分类材料;
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1. Excitonic polariton structures in Wurtzite GaN [J] . Torii K., Deguchi T., Nakanishi H., Physica, B. Condensed Matter . 2001,第0期

机译：纤锌矿型GaN中的激子极化子结构
2. Excitonic Effect in Optical Properties of Wurtzite Structure GaN Semiconductor Material [J] . Jang Jong Chol, Jang Jong Chol, Ri Kuk Chol, Kumsok . 2009,第1期

机译：纤锌矿结构GaN半导体材料的光学特性中的激子效应
3. Excitonic fine structure of zinc-blende and wurtzite colloidal CdSe nanocrystals and comparison to effective mass results [J] . Hanh Bui, Anastasia Karpulevich, Gabriel Bester Physical review . 2020,第11期

机译：闪锌矿和纤锌矿型CdSe纳米晶体的激子精细结构及其与有效质量结果的比较
4. FINE STRUCTURE AND MAGNETOOPTICS OF EXCITONIC LEVELS IN WURTZITE GaN [C] . Symposium on nitride semiconductors . 1998

机译：Wurtzite GaN中泻药水平的细结构和磁光
5. Optical anisotropy in Wurtzite InN/GaN disk-in-wire structures. [D] . Merrill, Ky. 2012

机译：纤锌矿型InN / GaN线内圆盘结构中的光学各向异性。
6. Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy [O] . Wei Wei, Zhixin Qin, Shunfei Fan, 2012

机译：X射线光电子能谱法测量β-Ga2O3/纤锌矿GaN异质结构的价带偏移
7. Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots [O] . Fonoberov, Vladimir A., Balandin, Alexander A. 2003

机译：应变纤锌矿和闪锌矿的激子特性 GaN / al（x）Ga（1-x）N量子点

FINE STRUCTURE AND MAGNETOOPTICS OF EXCITONIC LEVELS IN WURTZITE GaN

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