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PHASE SEPARATION AND ATOMIC ORDERING IN AlGaInN ALLOYS

机译：AlGaInN合金的相分离和原子有序化

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摘要

This paper reviews experimental results of phase separation and atomic long-range ordering in AlGalnN alloys, grown by plasma-assisted MBE. Phase separation has been observed in In_xGa_(1-x)N alloys and atomic ordering has been observed in Al_xGa_(1-x)N alloys, using XRD studies. Specifically, we find that alloys with In content in excess of 30% show an extra diffraction peak corresponding to an alloy with high In concentration (close to pure InN). The effect of phase separation on the optical properties of the films was also investigated by transmission and photoluminescence measurements. From these studies, we find that the degree of phase separation depends on the thickness of the alloy layer. Atomic long-range ordering has been observed in Al_xGa_(1-x)N alloys over the entire alloy composition. The phenomenon was investigated by studying the superlattice peaks (0001), (0003) and (0005). The relative intensity of these peaks was found to be largest for the Al content in the 40-50 % range in qualitative agreement with expectations for an ordered structure of ideal Al_(0.5)Ga_(0.5)N stoichiometry. We found that the ratio of III/V fluxes has a significant effect on the degree of ordering.
机译：本文回顾了等离子辅助MBE生长的AlGalnN合金的相分离和原子长程有序的实验结果。使用XRD研究，在In_xGa_（1-x）N合金中观察到相分离，并且在Al_xGa_（1-x）N合金中观察到原子有序。具体而言，我们发现In含量超过30％的合金显示出一个额外的衍射峰，这与In浓度高（接近纯InN）的合金相对应。还通过透射和光致发光测量研究了相分离对膜的光学性质的影响。从这些研究中，我们发现相分离的程度取决于合金层的厚度。在整个合金成分中，在Al_xGa_（1-x）N合金中已观察到原子远距离有序。通过研究超晶格峰（0001），（0003）和（0005）研究了该现象。发现这些峰的相对强度在40-50％范围内的Al含量最大，符合对理想Al_（0.5）Ga_（0.5）N化学计量的有序结构的预期。我们发现，III / V通量之比对有序度有显着影响。

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  • 来源
    《Nitride semiconductors》|1997年|193-204|共12页
  • 会议地点 Boston MA(US)
  • 作者

    T.D. MOUSTAKAS; R. SINGH; D. KORAKAKIS; D. DOPPALAPUDI; H.M. NG; A. SAMPATH; E. BLIOPOULOS; M. MISRA;

  • 作者单位

    Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215;

    Polaroid Corporation, Laser Diode Manufacturing and Development, Norwood, MA;

    Nottingham University, Nottingham, UK;

    Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215;

    Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215;

    Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215;

    Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215;

    Dept.;

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  • 正文语种 eng
  • 中图分类 材料;
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