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INVESTIGATION OF NUCLEATION AND INITIAL STAGE OF GaN GROWTH BY ATOMIC FORCE MICROSCOPY AND X-RAY DIFFRACTION

机译：用原子力显微镜和X射线衍射研究GaN生长的成核和初始阶段

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摘要

The nucleation and initial stage of GaN growth on sapphire was investigated by atomic force microscopy, X-ray diffraction and photoluminescence. A 15 to 30 nm thick GaN buffer layer deposited at proper conditions was extremely smooth and nearly amorphous. Proper post deposition annealing resulted in the buffer crystallized. The buffer layer deposition temperature, thickness and annealing time and temperature must be coordinated. Low deposition temperature and/or insufficient annealing of the buffer results in a GaN wafer which has fine spiking surface morphology with an RMS of 3.4 nm for 1.4 μm wafer, strong yellow luminescence and wide x-ray rocking curve FWHM. High deposition temperature, longer crystallization time, and a low growth rate results in a wafer which exhibits strong band edge luminescence without noticeable yellow luminescence, and a narrow (002) diffraction rocking curve. However, the surface morphology exhibits well developed hexagonal feature with RMS roughness of 14.3 nm for a 570 nm thick layer. X-ray rocking curve analysis revealed buffer crystallization, domain coalescence and alignment process. The FWHM of the ω-scan of GaN (101) diffraction was 1700-2000 arc seconds for 200-1400 nm wafers which indicates that the twist of the domains is not changing much with the growth.
机译：通过原子力显微镜，X射线衍射和光致发光研究了GaN在蓝宝石上的成核和初始阶段。在适当条件下沉积的15至30 nm厚的GaN缓冲层非常光滑，几乎是非晶态的。适当的沉积后退火导致缓冲液结晶。缓冲层的沉积温度，厚度以及退火时间和温度必须协调。较低的沉积温度和/或缓冲液退火不足，会导致GaN晶片具有出色的尖峰形貌，对于1.4μm晶片，其RMS为3.4 nm，具有强黄色发光和宽X射线摇摆曲线FWHM。高的沉积温度，更长的结晶时间和低的生长速率导致晶片显示出强的带边缘发光而没有明显的黄色发光，以及窄的（002）衍射摇摆曲线。但是，表面形态表现出很好的六边形特征，对于570 nm厚的层，RMS粗糙度为14.3 nm。 X射线摇摆曲线分析显示缓冲液结晶，畴聚结和排列过程。 GaN（101）衍射的ω-扫描的FWHM对于200-1400 nm晶圆为1700-2000弧秒，这表明畴的扭曲不会随生长而改变。

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  • 来源
    《Nitride semiconductors》|1997年|93-98|共6页
  • 会议地点 Boston MA(US)
  • 作者

    P.W. YIP; S.-Q. WANG; A. J. DREHMAN; L. D. ZHU; P. E. NORRIS;

  • 作者单位

    Air Force Research Laboratory, 80 Scott Dr., Hanscom AFB, MA 01731;

    Air Force Research Laboratory, 80 Scott Dr., Hanscom AFB, MA 01731;

    Air Force Research Laboratory, 80 Scott Dr., Hanscom AFB, MA 01731;

    NZ Applied Technologies, 8A Gill St., Woburn, MA 01801;

    NZ Applied Technologies, 8A Gill St., Woburn, MA 01801;

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  • 正文语种 eng
  • 中图分类 材料;
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