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HIGH-RESOLUTION X-RAY DIFFRACTION ANALYSIS OF 'DEVICE- QUALITY' CUBIC GaN GROWN ON (001)GaAs SUBSTRATE PREPARED BY ATOMIC-HYDROGEN TREATMENT AT 'HIGH TEMPERATURES'

机译：在“高温”下通过原子氢处理制备的（装置）GaAs基质上生长的“器件质量”立方氮化镓的高分辨率X射线衍射分析

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Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at "high temperatures", and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 ℃. It was found that single domain "device-quality" c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70 - 90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 ℃ could be less than 4×10~(-3).

机译：通过射频等离子体源MBE在“高温”下通过原子氢处理制备的（001）GaAs上生长立方GaN（c-GaN）层，并通过高分辨率X射线研究了外延层的结构特性摇摆曲线和相互空间映射测量。生长温度从620到740℃不等。已经发现，单畴“器件质量”的c-GaN层可以首次生长。（002）c-GaN的X射线摇摆曲线的FWHM可能小到70-90 arcsec，并且在680℃以上的温度下生长的c-GaN外延层中h-GaN相的夹杂可能小于4×10〜（-3）

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来源
《Nitride semiconductors》|1997年|465-470|共6页
会议地点 Boston MA(US)
作者
A. YOSHIKAWA; Z.X. QIN; H. NAGANO; Y. SUGURE; A.W. JIA; M. KOBAYASHI; M. SHIMOTOMAI; Y. KATO; K. TAKAHASHI;
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Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

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1. X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates [J] . X.M. Shen, Y.T. Wang, X.H. Zheng, Journal of Crystal Growth . 2003,第1a2期

机译：GaAs（001）衬底上MOCVD生长的GaN缓冲层的X射线衍射分析
2. Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers [J] . QU Bo, ZHENG Xinhe, WANG Yutian Science in China. Series A . 2001,第4期

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3. High-resolution X-ray diffraction and micro-Raman scattering studies of Ge(:Ga) thin films grown on GaAs (001) substrates by MOCVD [J] . Liu H. F., Jin Y. J., Li C. G., RSC Advances . 2016,第58期

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4. HIGH-RESOLUTION X-RAY DIFFRACTION ANALYSIS OF 'DEVICE- QUALITY' CUBIC GaN GROWN ON (001)GaAs SUBSTRATE PREPARED BY ATOMIC-HYDROGEN TREATMENT AT 'HIGH TEMPERATURES' [C] . Symposium on nitride semiconductors . 1998

机译：在“高温”中由原子氢处理制备的（001）GaAs底物上生长的“设备质量”立方GaN的高分辨率X射线衍射分析
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate [O] . Hryhorii Stanchu, Vasyl Kladko, Andrian V Kuchuk, 2015

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7. Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure [O] . Qu B, Zheng XH, Wang YT, 2001

机译：用常规X射线极图和掠入射衍射极图测量GaN / GaAs（001）外延层中六角形夹杂物和立方孪晶的极性依赖性
8. Investigation of misfit dislocation configurations in MBE-grown InGaAs layers on misaligned GaAs (001) substrates [R] . Werner, P, Zakharov, N D, Chen, Y, 1992

机译：在未对准的Gaas（001）衬底上研究mBE生长的InGaas层中的错配位错构型

HIGH-RESOLUTION X-RAY DIFFRACTION ANALYSIS OF 'DEVICE- QUALITY' CUBIC GaN GROWN ON (001)GaAs SUBSTRATE PREPARED BY ATOMIC-HYDROGEN TREATMENT AT 'HIGH TEMPERATURES'

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