Chemical synthesis and crystal growth of AgGaGeS_4, a material for mid-IR nonlinear laser applications

机译：AgGaGeS_4的化学合成和晶体生长，这是一种用于中红外非线性激光应用的材料

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AgGaGeS_4 compound (AGGS) is a promising nonlinear material for mid-IR applications. The different steps of this materials processing are presented. The chemical synthesis of polycrystals and the single crystal growth process are described. Compounds volatility can induce stoichiometry deviation and reduce the quality of obtained single crystals. Nevertheless, 28 mm diameter and 70 mm length single crystals have been grown by Bridgman-Stockbarger method, cut and polished AGGS crystal is obtained. The crystal has good homogeneity and absorption coefficient of less than 0.1 cm~(-1) in the 0.5-11.5 μm range which make it usable in nonlinear devices.

机译：AgGaGeS_4化合物（AGGS）是用于中红外应用的有前途的非线性材料。介绍了此材料处理的不同步骤。描述了多晶的化学合成和单晶生长过程。化合物的挥发性会导致化学计量比的偏差并降低获得的单晶的质量。然而，通过Bridgman-Stockbarger方法已经生长了直径28mm和长度70mm的单晶，获得了切割和抛光的AGGS晶体。晶体具有良好的均匀性，在0.5-11.5μm范围内的吸收系数小于0.1 cm〜（-1），可用于非线性器件。

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来源
《Nonlinear frequency generation and conversion: materials, devices, and applications XIV》|2014年|93471K.1-93471K.6|共6页
会议地点 San Francisco CA(US)
作者
J. Rame; J. Petit; Q. Clement; J.M. Melkonian; B. Viana;
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作者单位

ONERA, 29 avenue de la division Leclerc, 92322 Chatillon Cedex, France;

ONERA, 29 avenue de la division Leclerc, 92322 Chatillon Cedex, France;

ONERA, 29 avenue de la division Leclerc, 92322 Chatillon Cedex, France;

ONERA, 29 avenue de la division Leclerc, 92322 Chatillon Cedex, France;

IRCP Chimie ParisTech, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Non linear materials; AgGaGeS4; Crystal growth; Optical Characterization;

机译：非线性材料； AgGaGeS4;晶体生长；光学表征;

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1. Control of Melt Decomposition for the Growth of High Quality AgGaGeS_4 Single Crystals for Mid-IR Laser Applications [J] . J. Rame, B. Viana, Q. Clement, Crystal growth & design . 2014,第11期

机译：用于中红外激光应用的高质量AgGaGeS_4单晶生长的熔体分解控制
2. Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGenS2(n+1) (n=2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications [J] . Huang Wei, He Zhiyu, Zhu Shifu, Inorganic Chemistry: A Research Journal that Includes Bioinorganic, Catalytic, Organometallic, Solid-State, and Synthetic Chemistry and Reaction Dynamics . 2019,第9期

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3. AgGaGeS_4 Crystals for Nonlinear Laser Device Applications [J] . Subhasis Das, Chittaranjan Ghosh, Sudipta Gangopadhyay, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第7期

机译：用于非线性激光设备应用的AgGaGeS_4晶体
4. Chemical synthesis and crystal growth of AgGaGeS_4, a material for mid-IR nonlinear laser applications [C] . J. Rame, J. Petit, Q. Clement, Conference on nonlinear frequency generation and conversion: materials, devices, and applications XIV . 2015

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Chemical synthesis and crystal growth of AgGaGeS_4, a material for mid-IR nonlinear laser applications

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