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Simulation of high brightness tapered lasers

机译：高亮度锥形激光器的仿真

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摘要

Tapered semiconductor lasers have demonstrated both high power and good beam quality, and are of primary interest for those applications demanding high brightness optical sources. The complex non-linear interaction between the optical field and the active material requires accurate numerical simulations to improve the device design and to understand the underlying physics. In this work we present results on the design and simulation of tapered lasers by means of a Quasi-3D steady-state single-frequency model. The results are compared with experiments on Al-free active region devices emitting at 1060 nm. The performance of devices based on symmetric and asymmetric epitaxial designs is compared and the influence of the design on the beam properties is analyzed. The role of thermal effects on the beam properties is experimentally characterized and analyzed by means of the numerical simulations. Tapered lasers with separate electrical contacts in the straight and tapered sections, based on symmetrical and asymmetrical epitaxial designs are also presented and analyzed.
机译：锥形半导体激光器已经显示出高功率和良好的光束质量，并且对于那些需要高亮度光源的应用来说是主要的兴趣所在。光场和活性材料之间复杂的非线性相互作用需要精确的数值模拟，以改善设备设计并了解底层物理原理。在这项工作中，我们通过准3D稳态单频模型介绍了锥形激光器的设计和仿真结果。将结果与在1060 nm处发射的无铝有源区器件的实验进行比较。比较了基于对称和非对称外延设计的器件性能，并分析了设计对光束特性的影响。通过数值模拟对热效应对梁性能的作用进行了实验表征和分析。还介绍并分析了基于对称和不对称外延设计的在直线段和锥形段中具有单独电触点的锥形激光器。

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