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首页> 外文会议>Novel in-plane semiconductor lasers XIV >Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier
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Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

机译：使用分布式布拉格反射器激光器和脊形波导功率放大器，在800 nm和975 nm处产生光谱稳定的连续波发射和ns脉冲，峰值功率为4 W

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摘要

Semiconductor based sources which emit high-power spectrally stable nearly diffraction-limited optical pulses in the nanosecond range are ideally suited for a lot of applications, such as free-space communications, metrology, material processing, seed lasers for fiber or solid state lasers, spectroscopy, LIDAR and frequency doubling. Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of distributed Bragg reflector lasers (DBR) as master oscillators driven by a constant current and ridge waveguide power amplifiers which can be driven DC and by current pulses. In pulse regime the amplifiers modulated with rectangular current pulses of about 5 ns width and a repetition frequency of 200 kHz act as optical gates, converting the continuous wave (CW) input beam emitted by the DBR lasers into a train of short optical pulses which are amplified. With these experimental MOPA arrangements no relaxation oscillations in the pulse power occur. With a seed power of about 5 mW at a wavelength of 973 nm output powers behind the amplifier of about 1 W under DC injection and 4 W under pulsed operation, corresponding to amplification factors of 200 (amplifier gain 23 dB) and 800 (gain 29 dB) respectively, are reached. At 800 nm a CW power of 1 W is obtained for a seed power of 40 mW. The optical spectra of the emission of the amplifiers exhibit a single peak at a constant wavelength with a line width ＜ 10 pm in the whole investigated current ranges. The ratios between laser and ASE levels were ＞ 50 dB. The output beams are nearly diffraction limited with beam propagation ratios M~2_(lat) ～ 1.1 and M~2_(ver) ～ 1.2 up to 4 W pulse power.
机译：半导体源可发射纳秒范围内的高功率，光谱稳定，几乎受衍射限制的光脉冲，非常适合许多应用，例如自由空间通信，计量，材料加工，用于光纤或固态激光器的种子激光器，光谱，激光雷达和倍频。提出了基于主振荡器功率放大器（MOPA）光源的975 nm和800 nm二极管激光器的详细实验研究。 MOPA系统由分布式布拉格反射器激光器（DBR）作为主振荡器，由恒定电流驱动，而脊形波导功率放大器可由直流电和电流脉冲驱动。在脉冲状态下，由大约5 ns宽度的矩形电流脉冲和200 kHz重复频率调制的放大器充当光闸，将DBR激光器发射的连续波（CW）输入光束转换成短光脉冲序列，即放大。通过这些实验性的MOPA装置，在脉冲功率中不会出现弛豫振荡。在973 nm波长处具有约5 mW的种子功率，在直流注入下，放大器后面的输出功率约为1 W，在脉冲操作下约为4 W，对应于200（放大器增益23 dB）和800（增益29）的放大系数分贝）。在800 nm处，对于40 mW的种子功率，获得1 W的CW功率。在整个研究电流范围内，放大器发射的光谱在恒定波长处显示一个峰，且其线宽＜10 pm。激光和ASE水平之间的比率为＞ 50 dB。输出光束几乎被衍射限制，光束传播比M〜2_（lat）〜1.1和M〜2_（ver）〜1.2高达4 W脉冲功率。

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  • 来源
    《Novel in-plane semiconductor lasers XIV》|2015年|93821I.1-93821I.10|共10页
  • 会议地点 San Francisco CA(US)
  • 作者

    A. Klehr; H. Wenzel; J. Fricke; F. Bugge; A. Liero; Th. Hoffmann; G. Erbert; G. Traenkle;

  • 作者单位

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D 12489 Berlin, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Semiconductor laser; distributed Bragg reflector laser; ridge waveguide laser; semiconductor optical amplifier; pulse generation;

    机译：半导体激光器；分布式布拉格反射器激光器；脊形波导激光器半导体光放大器脉冲产生;

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