Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR

著录项

• 来源
  《Novel in-plane semiconductor lasers XV》|2016年|976709.1-976709.9|共9页
• 会议地点 San Francisco CA(US)
• 作者

  J. Hader; J.V. Moloney; O. Rubel; S.C. Badescu; S. Johnson; S. W. Koch;

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• 作者单位

  Nonlinear Control Strategies Inc., Tucson, AZ 85704, USA ,College of Optical Sciences, University of Arizona, Tucson, AZ 85721, USA;

  Nonlinear Control Strategies Inc., Tucson, AZ 85704, USA ,College of Optical Sciences, University of Arizona, Tucson, AZ 85721, USA;

  Department of Materials Science and Engineering, McMaster University, Hamilton, ON L8S 4L8, Canada;

  Wyle Aerospace, Dayton, OH 45431, USA;

  Arizona State University, Tempe, AZ 85287;

  College of Optical Sciences, University of Arizona, Tucson, AZ 85721, USA ,Department of Physics, Philips University Marburg, Renthof 5, 35032 Marburg, Germany;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  many-body theory; mid-IR materials; Bismuth containing materials; band anti-crossing; density functional theory; absorption; Auger losses;

  机译：多体理论中红外材料；含铋材料；带防交叉密度泛函理论;吸收俄歇损失;