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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Nickel, Platinum and Zirconium Germanosilicide Contacts to Heavily Phosphorous Doped Silicon-Germanium Alloys for Advanced CMOS Source/Drain Junctions
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Nickel, Platinum and Zirconium Germanosilicide Contacts to Heavily Phosphorous Doped Silicon-Germanium Alloys for Advanced CMOS Source/Drain Junctions

机译：镍，铂和锆锗硅化物触点与用于高级CMOS源/漏结的重掺杂磷的硅锗合金接触

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摘要

As the MOSFET dimensions continue to shrink, source/drain contact resistance is emerging as the dominant component of the MOSFET parasitic series resistance. To meet the series resistance requirements of future MOSFETs, contact resistivity values near 10~(-8) ohm-cm~2 are required. Selective Si_(1-x)Ge_x source/drain technology has been proposed as an alternative to ion-implantation to form the ultra-shallow junctions of future CMOS technology nodes. One of the key advantages of this technology is the smaller band gap of Si_(1-x)Ge_x, which provides a smaller contact barrier height, an essential requirement for reducing the contact resistivity. We have previously reported low-resistivity of Ni germanosilicide NiSi_(1-x)Ge_x and Pt germanosilicide PtSi_(1-x)Ge_x contacts to boron doped Si_(1-x)Ge_x alloys. In this work, Zr germanosilicide, Zr(Si_(1-x)Ge_x)_2 was considered as an alternative material with a higher thermal stability than Ni and Pt germanosilicides. The contact resistivity values for different contact materials were measured using four-terminal Kelvin structures. The results from this work show that both Zr and Pt germanosilicides yield high contact resistivity values around 10~(-7) ohm-cm~2. On the other hand Ni germanosilicide contacts can reach 10~(-8) ohm-cm~2 with further improvements using a thin layer of Pt under Ni.
机译：随着MOSFET尺寸的不断缩小，源极/漏极接触电阻正逐渐成为MOSFET寄生串联电阻的主要组成部分。为了满足未来MOSFET的串联电阻要求，要求接触电阻率值接近10〜（-8）ohm-cm〜2。已提出选择性Si_（1-x）Ge_x源/漏技术作为离子注入的替代方法，以形成未来CMOS技术节点的超浅结。该技术的主要优点之一是Si_（1-x）Ge_x的带隙较小，从而提供了较小的接触势垒高度，这是降低接触电阻率的基本要求。先前我们已经报道了掺锗的Si_（1-x）Ge_x合金的Ni锗硅化NiSi_（1-x）Ge_x和Pt锗硅化物PtSi_（1-x）Ge_x接触的低电阻率。在这项工作中，Zr锗硅化物Zr（Si_（1-x）Ge_x）_2被认为是比Ni和Pt锗硅化物具有更高热稳定性的替代材料。使用四端子开尔文结构测量了不同接触材料的接触电阻率值。这项工作的结果表明，Zr和Pt锗硅化物都能产生大约10〜（-7）ohm-cm〜2的高接触电阻率值。另一方面，使用在Ni下的Pt薄层可以进一步改善Ni锗硅化物的接触，可以达到10〜（-8）ohm-cm〜2。

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