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首页> 外文会议>Optical Diagnostic Methods for Inorganic Transmissive Materials >FTIR reflectance characterization of SIMOX buried oxide layers
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FTIR reflectance characterization of SIMOX buried oxide layers

机译：SIMOX掩埋氧化物层的FTIR反射特性

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Abstract: The technique of implanting silicon wafers with sufficient oxygen to form a continuous buried oxide (BOX) layer is known as SIMOX (Separation by Implanting Oxygen). SIMOX wafers present leading-edge semiconductor technology with a great need for on-line process control. Development of thin (80 to 200 nm) BOX is a primary step toward improved device performance and cost reduction. Tight control of the BOX properties, such as the implant dose, thickness, refractive index, and composition, is required in the production. A method to characterize non-destructively BOX layer by means of FTIR normal incidence reflectance spectroscopy has been developed with a particular orientation to in-situ applications. A data reduction procedure based on multi-layer model delivers thickness and dielectric function of a thin BOX layer, and enables one to measure the implant dose with a precision of a tenth of a percent. A compact and robust FTIR spectrometer from On-Line Technologies, combined with sampling optics and sensitive detection, provides excellent signal-to- noise ratio and is well suited for a coupling with oxygen implantation machines for in-situ process control. !13
机译：摘要：用足够的氧气注入硅片以形成连续的掩埋氧化物（BOX）层的技术被称为SIMOX（通过注入氧气进行分离）。 SIMOX晶片代表了对在线工艺控制的巨大需求的尖端半导体技术。薄（80至200 nm）BOX的开发是朝着改善设备性能和降低成本迈出的第一步。在生产中需要严格控制BOX特性，例如植入剂量，厚度，折射率和组成。已经开发了一种通过FTIR法向入射反射光谱法来表征非破坏性BOX层的方法，其具有针对现场应用的特定取向。一种基于多层模型的数据缩减程序可提供薄BOX层的厚度和介电功能，并使人们能够以十分之一的精度测量植入剂量。来自On-Line Technologies的紧凑而坚固的FTIR光谱仪，结合了采样光学器件和灵敏检测功能，可提供出色的信噪比，非常适合与用于现场过程控制的注氧机耦合。 ！13

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