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首页> 外文会议>Optical materials in defence systems technology VI >CMP Process Comparison for 150mm larger area InSb (111)B focal plane array substrates
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CMP Process Comparison for 150mm larger area InSb (111)B focal plane array substrates

机译：150mm大面积InSb（111）B焦平面阵列基板的CMP工艺比较

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As size requirements and pixel viabilities for mid-wavelength infrared (MWIR) focal plane arrays (FPAs) continue to increase, larger InSb substrate diameters are of significant interest. To improve resolution and sensitivity requirements for high performance infrared focal plane array (IRFPA) imaging systems in the 1-5.4 μm region (77°K), the surface of new larger diameter (150mm) InSb substrates must meet or surpass stringent demands. The scale-up to 150mm InSb has necessitated changes in processing and finishing parameters, as device layer growth by epitaxy or other means often requires a surface roughness average (R_a)～0.1 nm. This study compares two different CMP finishes for new 150mm diameter InSb wafers and examines their suitability for IRFPA applications. InSb surface quality was examined by molecular beam epitaxy (MBE), reflective high energy electron diffraction (RHEED), atomic force microscopy (AFM), thermal X-ray spectroscopy (TXPS), and multiple crystal x-ray diffraction (XRD) for two distinct CMP finishes on InSb(111)B substrates from the same crystal boule. This study has shown that differences result in thermal desorption properties with the CMP process, consistent with differences in surface smoothness and oxide composition. Better surface composition and crystallinity were produced with a modified CMP process for the 150mm diameter crystals. We conclude that the differential ratio between the pH, the oxidizer percentage, and the buffering percentage of the modified CMP process is a benefit to larger diameter InSb IRFPA applications.
机译：随着对中波长红外（MWIR）焦平面阵列（FPA）的尺寸要求和像素生存能力的不断提高，人们越来越关注更大的InSb衬底直径。为了提高对1-5.4μm区域（77°K）中的高性能红外焦平面阵列（IRFPA）成像系统的分辨率和灵敏度的要求，新的更大直径（150mm）InSb基板的表面必须满足或超过严格的要求。放大至150mm InSb时，必须改变加工和精加工参数，因为通过外延或其他方式生长器件层通常需要平均表面粗糙度（R_a）〜0.1 nm。这项研究比较了两种新的直径为150mm的InSb晶片的CMP抛光剂，并研究了它们对IRFPA应用的适用性。通过分子束外延（MBE），反射高能电子衍射（RHEED），原子力显微镜（AFM），热X射线光谱（TXPS）和多晶X射线衍射（XRD）检验了InSb表面质量同一晶锭在InSb（111）B衬底上进行不同的CMP抛光。这项研究表明，差异会导致CMP工艺的热脱附性能，这与表面光滑度和氧化物组成的差异一致。采用改进的CMP工艺处理直径为150mm的晶体可获得更好的表面组成和结晶度。我们得出结论，改进的CMP工艺的pH，氧化剂百分率和缓冲百分率之间的差异比有利于大直径InSb IRFPA应用。

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