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Impact of coma on CD control for multiphase PSM designs

机译：昏迷对多相PSM设计CD控制的影响

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Abstract: Alternating PSM applied selectively to transistor regions on the poly gate mask is one way to achieve smaller gate CDs and tighter CD control. When using multiphase PSMs we have observed, experimentally, a difference between the CDs of isolated lines when the phase shifter is on the right side compared to the left side (we have called this effect the PSM right-left effect). The effect is shown to correlate with lens coma and the magnitude of the effect is also a strong function of defocus. In this paper we present experimental data showing the magnitude of the effect and how it can be minimized by choosing optimum values of numerical aperture (NA) and partial coherence ($sigma@). The magnitude of the effect within the stepper field is shown to correlate with measured coma values. The sensitivity of the effect to defocus was calculated. Aerial Image simulation was performed and found to predict the experimental behavior to within a factor of two. Variations in PSM design were explored using simulation. In general, the effect is reduced if the PSM layout is symmetrical. By comparing the sensitivity to coma of various PSM designs with the sensitivity of line pair structures on binary masks we were able to determine which designs had acceptable coma sensitivity. !4
机译：摘要：选择性地将PSM交替施加到多晶硅栅极掩模上的晶体管区域是实现较小的栅极CD和更严格的CD控制的一种方法。当使用多相PSM时，我们通过实验观察到，当移相器位于右侧时与左侧相比，隔离线的CD之间存在差异（我们称此效应为PSM左右效应）。已显示该效果与晶状体昏迷相关，并且效果的大小也是散焦的重要功能。在本文中，我们提供了实验数据，这些数据显示了效应的大小以及如何通过选择数值孔径（NA）和部分相干（$ sigma @）的最佳值将其最小化。步进场内的效果的大小显示为与测得的昏迷值相关。计算了散焦效果的敏感性。进行了航空影像仿真，发现可以预测实验行为在两倍之内。使用模拟探索了PSM设计的变化。通常，如果PSM布局对称，则效果会降低。通过比较各种PSM设计对昏迷的敏感度与二进制掩模上线对结构的敏感度，我们能够确定哪些设计具有可接受的昏迷敏感度。 ！4

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