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Deep-UV reflection control for patterning dielectric layers

机译：用于图案化介电层的深紫外线反射控制

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Abstract: This paper describes the results of CD control studies on a dielectric layer that has both dense & isolated trenches and dense contact holes. Both top and bottom anti-reflective coatings were explored as well as the standard process without ARC. All wafers had a standard logic technology process flow and had been through Chemical-Mechanical Planarization prior to patterning. Stepper exposure conditions were varied in the form of partial coherence to obtain maximum depth of focus and exposure latitude. The results of this study were characterized in the form of a CD process window in which Exposure Dose was plotted vs. Defocus for all the 3 patterns i.e. dense & isolated trenches and dense contact holes. The effect of BARC etch was also explored. !10
机译：摘要：本文描述了在具有密集和隔离沟槽以及密集接触孔的介电层上进行CD控制研究的结果。研究了顶部和底部抗反射涂层以及不使用ARC的标准工艺。所有晶圆均具有标准逻辑技术工艺流程，并且在进行图案形成之前已通过化学机械平面化处理。步进曝光条件以部分相干的形式变化，以获得最大的聚焦深度和曝光范围。这项研究的结果以CD工艺窗口的形式表征，其中针对所有3种图案（即密集和隔离的沟槽以及密集的接触孔）绘制了曝光剂量与散焦的关系图。还研究了BARC蚀刻的效果。 ！10

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